We show a quantitative connection between Refractive Index Profiles (RIP) and measurements made by an Atomic Force Microscope (AFM). Germanium doped fibers were chemically etched in hydrofluoric acid solution (HF) and the wet etching characteristics of germanium were studied using an AFM. The AFM profiles were compared to both a concentration profile of the preform determined using a Scanning E...

Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms E centers in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E cente...

We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectromet...

The paper reviews the polyanionic hexagons of silicon and germanium, focusing on aromaticity. The chair-like structures of hexasilaand hexagermabenzene are similar to a nonaromatic cyclohexane (CH2)6 and dissimilar to aromatic D6h-symmetric benzene (CH)6, although silicon and germanium are in the same group of the periodic table as carbon. Recently, six-membered silicon and germanium rings with...

Lamellar nanocomposites based on semiconducting polymers incorporated into layered inorganic matrices are prepared by the co-assembly of organic and inorganic precursors. Semiconducting polymer-incorporated silica is prepared by introducing the semiconducting polymers into a tetrahydrofuran (THF)/water homogeneous sol solution containing silica precursor species and a surface-active agent. Semi...

sno nanoparticles were synthesized using microwave–assisted hydrothermal method. it was noticed that at 300 and 600 watt microwave power, sno formed and remained in the tetragonal phase. at 900 watt, sno2 started appearing and a mixture of sno and sno2 phases coexisted. the particle size varied from ~2 to ~13 nm at 300 to 900 watt radiation power. the uv-v absorption spectra showed the excitoni...

Three-dimensional molecular dynamics simulations are conducted to study the nanometric cutting of germanium. The phenomena of extrusion, ploughing, and stagnation region are observed from the material flow. The uncut thickness which is defined as the depth from bottom of the tool to the stagnation region is in proportion to the undeformed chip thickness on the scale of our simulation and is alm...

The response of a high-purity germanium detector to X-rays in the 8-15-keV energy region has been investigated. The w-value and energy resolution dependencies on the X-ray energy have been studied. No abrupt variation of w is observed at the germanium K absorption-edge (11.104-keV). The detector energy resolution follows a characteristic linear dependence on Ex(-1/2) over the whole energy range...

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-f...

Strained silicon germanium carbon (Si1 x yGexCy or SiGeC) on silicon was oxidized using a novel photo-oxidation process. The growth rate of the oxide was investigated and found to depend heavily on the germanium and carbon concentrations. MOS capacitors were fabricated with the resulting oxide and electrical characterization was done. The SiGeC MOS capacitors proved to have high leakage current...