This work explores the electrical characteristics of NButyl-N`-(6-hydroxyhexyl)perylene-3,4,9,10-tetracarboxylic acid diimide (N-BuHHPDI). For this purpose, Al/N-BuHHPDI/ITO Schottky diode is fabricated in which N-BuHHPDI plays the role of an active organic semiconductor layer. A 150 nm thick film of NBuHHPDI is deposited onto an indium tin oxide (ITO) substrate using the vacuum thermal evapora...

A series of Schottky diodes based on single GaN nanowires has been fabricated. Based the data small-signal frequency analysis (parameter S 21 ) diode structures at various bias voltages, parameters corresponding equivalent electrical circuit were determined. It is shown that cutoff fabricated reaches 27.5 GHz. Keywords: GaN, nanowires, microwave band, diode.

I A reliable device model is crucial for the development d implementation of a circuit design. However, the sation of a high quality model requires a significant lount of timeand money. The software package presented this paper seeks to minimize the timeand money invested the realization of a high quality model for SiC Schottky, erged PiN Schottky, and PiN Power diodes based on cNutt and Mantoo...

Substantial progress has b2een made recently in the advancement of solid state terahertz sources using chains of Schottky diode frequency multipliers [1-3]. The multiplier diodes are often simulated using a simple Schottky junction model plus a series resistance, RS, because of the model’s simplicity and ease of use in commercial harmonic balance simulators. The DC series resistance value is us...

Presented in this paper are the characteristics of the first Trench MOS Schottky Diode released to manufacturing by International Rectifier. The optimized Silicon structure enables 15% VF reduction and a factor 4 of leakage suppression compared to a benchmark conventional planar device of the same voltage class. After reviewing the key features of Silicon design, the results of an in-circuit te...

sists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, ther...

The small silicon chip of Schottky diode (0.8 × 0.8 0.4 mm3) with planar arrangement electrodes (chip PSD) as temperature sensor, which functions under the operating conditions pressure was developed. forward current-voltage I–V characteristic PSD is determined by potential barrier between Mo and n-Si (ND = 3 1015 cm?3). Forward voltage UF 208 ± 6 mV coefficient TC -1.635 0.015 mV/°C (with line...

Copper phthalocyanine (CuPc)/Aluminum (Al) Schottky diode solar cells were studied. The thickness of the CuPc layer was varied from 15 nm to 140 nm. Short circuit current densities (Jsc) increased with thickness from 0.042 mA/cm at 15 nm to 0.124 mA/cm at 120 nm reaching saturation at that level. Open circuit voltages (Voc) increased from 220 mV at 15 nm to 907 mV at 140 nm. Analysis of the cur...

Diamond, which has excellent physical properties, is attractive for use in industrial applications. Because diamond is rated the highest for hardness and heat conductivity among all known materials, it is widely used for products such as abrasive grains, cutting tools, and heatsinks. Diamond also exhibits excellent transparency even in the ultraviolet range and can be applied to optical tools. ...