Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which...

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non-ideal behavior of I–V characteristics with an ideality factor of 1.13 and barrier height of 0.735 eV. The forward bias saturation current was found to be large (3×10 A vs. ...

An open structure SIS receiver, used already for astronomy at 345 GHz was tested at 470 and 690 GHz. Receiver noise temperatures considerably better than those of standard systems based on Schottky diode mixers were accomplished. A specific merrit of this system is the option to change the range of input frequencies by simply mounting a specific mixer element in a standard mixer block and by ex...

An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V plots indicated that the thermoionic emi...

Zero bias Schottky diode model for low RF input power (≤ 0 dBm at antenna input port) and moderate DC current (≥ 30 μA) RECtifying anTENNAs (RECTENNAs) is investigated. The model provides diode parameters at the desired output DC current level to be matched with the antenna so that optimum power transfer from antenna to the diode occurs. The model relies primarily on DC V-I diode characteristic...

This paper summarizes the development of novel Schottky-diode-based terahertz frequency multipliers. The basic structure and manufacturing process planar Schottky barrier diodes (SBDs) are reviewed, along with other diode structures that have been proposed in literature. A numerical modeling method for context multipliers is presented, which includes 3D electromagnetic (EM) modeling, electro-th...

This paper experimentally studies the temperature dependencies of current–voltage (I–V) and capacitance–voltage (C–V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450◦C. Their I–V charact...

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitan...

In this paper, the failure mode and mechanism of silicon carbide (SiC) Schottky barrier diode (SBD) irradiated by high-energy tantalum (Ta) ions are studied. The experimental results show that reverse bias voltage during irradiation is key factor causing SiC SBDs. When device 400 V, heavy will cause single event burnout (SEB), a “hole” formed melting material appears in device. 250–300 manifest...