MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because of its large band gap and small electron affinity, a considerable Schottky barrier exists between MoS2 and contact metal, hindering the further study of spin transport and spin injection in MoS2. Although substantial p...

Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height ( ), ideali...

The current–voltage characteristics of a Schottky diode are simulated numerically using the thermionic emission-diffusion mechanism and considering a Gaussian distribution of barrier heights, with a linear bias dependence of both the mean and standard deviation. The resulting data are analyzed to get insight into the effects of distribution parameters on the barrier height, activation energy pl...

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N. G. Hörmann,1 I. Zardo,1,2 S. Hertenberger,1 S. Funk,1,2 S. Bolte,1,3 M. Döblinger,3 G. Koblmüller,1 and G. Abstreiter1,2 1Walter Schottky Institut and Physik Department, Technische Universität München, am Coulombwall 4, D-85748 Garching, Germany 2Institute for Advanced Study, Technische Universität München, Lichtenbergstraße 2 a, D-85748 Garching, Germany 3Department of Chemistry, Ludwig-Max...