TECHNOLOGY In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The MBE grown InP-based DHBTs with an emitter area of 1 × 4 μm exhibited peak cutoff frequencies (fT and fMAX) > 300 GHz, and a breakdown voltage (BVCEo) of ~ 5 V. The InP DHBT layer structures were grown on 3” semiinsulating InP substrat...