We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...

We report on the application of a laser rapid thermal annealing technique for iterative bandgap engineering at selected areas of quantum semiconductor wafers. The approach takes advantage of the quantum well intermixing (QWI) effect for achieving targeted values of the bandgap in a series of small annealing steps. Each QWI step is monitored by collecting a photoluminescence map and, consequentl...

Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their "amorphous" or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chlorid...

Crystalline yttria-stabilized zirconia (YSZ) gate dielectrics have been successfully fabricated on silicon wafers. By carefully controlling the annealing condition, the crystalline YSZ gate dielectrics show promising performances following the rapid thermal annealing process. The equivalent electrical oxide thickness only increases about 2.0 Å after annealing in O2 gas, while the leakage curren...

Structural rejuvenation in metallic glasses by a thermal process (i.e. through recovery annealing) was investigated experimentally and theoretically for various alloy compositions. An increase in the potential energy, a decrease in the density, and a change in the local structure as well as mechanical softening were observed after thermal rejuvenation. Two parameters, one related to the anneali...

Si ion implantation was widely used to synthesize specimens of SiO2 containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si...

Fabrication of devices and circuits on silicon wafers creates patterns in optical properties, particularly the thermal emissivity and absorptivity, that lead to temperature nonuniformity during rapid thermal processing (RTP) by infrared heating methods. The work reported in this paper compares the effect of emissivity test patterns on wafers heated by two RTP methods: (1) a steadystate furnace ...

In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have bee...

The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 1C with arsenic (As) and phosphorus (P) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 71. Compared with impurity-free induced intermixing, the intermixing degree is significantly ...

Immunoglobulins are important biomarkers to evaluate the immune status or development of infectious diseases. To provide timely clinical treatments, it is important to continuously monitor the level of multiple immunoglobulins. Localized surface plasmon resonance (LSPR)-based nanoplasmonic sensors have been demonstrated for multiplex immunoglobulins detection. However, the sensor fabrication pr...