SUMMARY We recently determined the values of intrinsic spin-orbit (SO) parameters for Ino.s2Alo.48As(In0.53Ga0.47As(lO nm)(Ino.s2Alo.48AS (InGaAs(InAlAs) quantum wells (QW), lattice-matched to (00l) InP, from the weak localizationjantilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the sub-band energy spectra for the InGaAs(InAlAs double ...

Quantum well (QW) resonances are identified in Ag films on an Fe(100) surface and are used in low energy electron microscopy to monitor film morphology during annealing and growth. We find that Ag films thermally decompose to thicknesses that are stabilized by QW states at the Gamma point. Novel growth morphologies are also observed that highlight the competition between kinetic limitations and...

In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in InxGa1−xAs FinFET with varying Indium (x = 0.53, 0.70) percentage and quantization [bulk, quantum well (QW)]. Due to lower effective transport mass and higher injection velocity, In0.7Ga0.3As QW FinFET provides better performance than In0.53Ga0.47As bulk FinFET. However, stronger quanti...

A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission br...

We recently determined the values of intrinsic spin-orbit (SO) parameters for In0.52Al0.48As/In0.53Ga0.47As(10 nm)/In0.52Al0.48As (InGaAs/InAlAs) quantum wells (QW), lattice-matched to (001) InP, from the weak localization/antilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the subband energy spectra for the InGaAs/InAlAs double QW system...

The direct epitaxial growth of ultrahigh-mobility InGaAs/InAlAs quantum-well (QW) device layers onto silicon substrates using metamorphic buffer layers is demonstrated for the first time. In this letter, 80 nm physical gate length depletionmode InGaAs QW transistors with saturated transconductance gm of 930 μS/μm and fT of 260 GHz at VDS = 0.5 V are achieved on 3.2 μm thick buffers. We expect t...

An InGaAs/GaAs quantum well ~QW! disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathod...

In this work InGaN quantum dots (QDs) in GaN matrix formed during strain induced phase separation were investigated. We show that although electron – photon interaction rate in residual quantum well (QW) InGaN is high, carrier capture to QD levels and carrier escape from QD levels to the QW is slowed presumably due to large energy distance between the QD levels and between the QD levels and the...

Ballistic Electron Emission Microscopy (BEEM) and finite-element electrostatic modeling were used to quantify how “small-size” effects modify the energy barrier at metal/semiconductor nanostructure nanocontacts, formed by making Schottky contacts to cleaved edges of GaAs quantum wells (QWs). The Schottky barrier height over the QWs was found to systematically increase with decreasing QW width, ...