We report the operation of a photopumped blue Znx8Cdy8Mg12x82y8Se/ZnxCdyMg12x2ySe separate confinement heterostructure single quantum well laser grown lattice matched to InP with a relatively thick quaternary quantum well ~;50 Å!. Laser emission at 492 nm in the blue was observed. The lasing linewidth is about 5 nm. Based on the temperature dependency of the threshold pumping intensity, the cha...

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The implementations of quantum logic gates realized by the rovibrational states of a C(12)O(16) molecule in the X((1)Σ(+)) electronic ground state are investigated. Optimal laser fields are obtained by using the modified multitarget optimal theory (MTOCT) which combines the maxima of the cost functional and the fidelity for state and quantum process. The projection operator technique together w...

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 -...

In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quan...

The modulation response, relative intensity noise (RIN) and frequency noise (FN) characteristics of quantum dot (QD) lasers are investigated theoretically in the presence of an external optical beam. Using small signal analysis of the rate equations for carriers and photons, it is demonstrated that by injecting excess carriers into the QDs excited state through optical pumping, the modulation r...

The effects of laser irradiation on the optical properties of GaAsN and GaInNAs quantum wells are studied in detail. The laser treatment is found to affect GaAsN quantum wells quite similarly to thermal annealing. The most intense photoluminescence is obtained by utilizing both thermal and laser treatments. In quaternary GaInNAs, the effects of thermal annealing and laser treatment differ from ...

We present a comparative study of numerical simulations and experiments on the spatiotemporal dynamics and emission characteristics of quantum-well and quantum-dot lasers of identical structure. They show that, in the quantum-dot laser, the strong localization of carrier inversion and the small amplitude–phase coupling enable a significant improvement of beam quality compared to quantum-well la...

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orie...