AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

In this paper we propose a microwave detector based on a AlGaAs/ InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitr...

Articles you may be interested in Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Very low threshold single quantum well gradedindex separate...

An ultrathin film with a periodic interlayer spacing was grown by the deposition of Cu atoms on the fivefold surface of the icosahedral Al70Pd21Mn9 quasicrystal. For coverages from 5 to 25 monolayers, a distinctive quasiperiodic low-energy electron diffraction pattern is observed. Scanning tunneling microscopy images show that the in-plane structure comprises rows having separations of S=4.5+/-...

We have studied the blue shift in photoluminescence emission energy of pseudomorphic InGaAs/ GaAs quantum wells grown on patterned ~001! GaAs substrates with grooves and trenches having vertical sidewalls made by dry etching. Dependence of the blue shift, which can be as large as 51 meV, on the direction, feature size, and the etch depth of the patterns as well as the thickness of the buffer la...

In this paper, The x Al 1-x As graded buffer was inserted between the InAlAs layer and pseudomorphic 0.66 Ga 0.34 channel to improve material quality in channel. results show that with 50 nm thickness can obtain a good heterojunction interface root mean square (RMS) of 0.154 nm. two dimensional electron gas (2-deg) mobility concentration were 8570 cm 2 /Vs. 2.7 −2 × 10 12 at 300K, respectively....

We present the results of a twofold experimental and computational study (0001) GaN/AlN multilayers forming pseudomorphic superlattices. High-Resolution Transmission Electron Microscopy (HRTEM) shows that heterostructures with four c-lattice parameters thick GaN Quantum Wells (QW) are misfit-dislocation free. Accurate structural data extracted from HRTEM images via new methodology optimizing re...

The pseudomorphic transformation of spherical silica gel (LiChrospher® Si 60) into MCM-41 was achieved by treatment at 383 K for 24 h with an aqueous solution of cetyltrimethylammonium hydroxide (CTAOH) instead of hexadecyltrimethylammonium bromide (CTABr) and NaOH. The degree of transformation was varied via the ratio of CTAOH solution to initial silica gel rather than synthesis duration. The ...

Details of the electronic bandstructure in pseudomorphic Ga1-xInxN/GaN single heterostructures (0 < x < 0.22) are studied. In photocarrier modulated reflectance strong modulation of the density of states (Franz-Keldysh oscillations) is found due to a piezoelectric field of about 0.6 MV/cm in the strained layer. No excitons are expected to form in the presence of this field. Studying the composi...