Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer By Seung-Chan Han School of Electrical and Electronic Engineering College of Engineering Yonsei University Wireless communication is becoming an crucial area of today’s life. With chasing this trend, there are continuously growing demands for ultra-wideband transmission due to insufficiency of available ...

A CMOS VLSI chip that determines the position and orientation of an object is described. The chip operates in a continuous-time analog fashion, with a response time as short as 200 s and power consumption under 50 mW. A self-contained phototransistor array acquires the image directly, and the output is a set of eight currents from which the position and orientation can be found. Orientation is ...

A CMOS 64× 64 pixel area image sensor chip using Sigma-Delta modulation at each pixel for A/D conversion is described. The image data output is digital. The chip was fabricated using a 1.2μm two layer metal single layer poly n-well CMOS process. Each pixel block consists of a phototransistor and 22 MOS transistors. Test results demonstrate a dynamic range potentially greater than 93dB, a signal...

Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-ba...