نتایج جستجو برای: photon field diode

تعداد نتایج: 866571  

Journal: :Science 2002
Zhiliang Yuan Beata E Kardynal R Mark Stevenson Andrew J Shields Charlene J Lobo Ken Cooper Neil S Beattie David A Ritchie Michael Pepper

Electroluminescence from a single quantum dot within the intrinsic region of a p-i-n junction is shown to act as an electrically driven single-photon source. At low injection currents, the dot electroluminescence spectrum reveals a single sharp line due to exciton recombination, while another line due to the biexciton emerges at higher currents. The second-order correlation function of the diod...

Journal: :Optics letters 2005
Franco Zappa Simone Tisa Angelo Gulinatti Andrea Gallivanoni Sergio Cova

A complete module for single-photon counting and timing is demonstrated in a single chip. Features comparable with or better than commercially available macroscopic modules are obtained by integration of an active-quenching and active-reset circuit in complementary metal-oxide semiconductor technology together with a single-photon avalanche diode (SPAD). The integrated SPAD has a 12-microm-diam...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2009
Jingquan Lin Nils Weber Adrian Wirth Soo Hoon Chew Matthias Escher Michael Merkel Matthias F Kling Mark I Stockman Ferenc Krausz Ulf Kleineberg

Nanoplasmonic excitations as generated by few-cycle laser pulses on metal nanostructures undergo ultrafast dynamics with timescales as short as a few hundred attoseconds (1 as = 10(-18) s). So far, the spatiotemporal dynamics of optical fields localized on the nanoscale (nanoplasmonic field) have been hidden from direct access in the real space and time domain. An approach which combines photoe...

2016
Carmen Palacios-Berraquero Matteo Barbone Dhiren M Kara Xiaolong Chen Ilya Goykhman Duhee Yoon Anna K Ott Jan Beitner Kenji Watanabe Takashi Taniguchi Andrea C Ferrari Mete Atatüre

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transitio...

Journal: :Optics express 2005
J Fulconis O Alibart W Wadsworth P Russell J Rarity

We demonstrate a picosecond source of correlated photon pairs using a micro-structured fibre with zero dispersion around 715 nm wavelength. The fibre is pumped in the normal dispersion regime at ~708 nm and phase matching is satisfied for widely spaced parametric wavelengths. Here we generate up to 10;7 photon pairs per second in the fibre at wavelengths of 587 nm and 897 nm, while on collectin...

Journal: :Journal of biomedical optics 1999
Z X Zhang G J Sonek X B Wei C Sun M W Berns B J Tromberg

Cell viability and DNA denaturation are measured through two-photon fluorescence excitation using a single diode laser beam as the trapping and exciting source simultaneously. Two-photon fluorescence emission spectra are presented for CHO cells and T lymphocytes loaded with various fluorescent probes. This single beam method is demonstrated to be a safe tool to monitor the viability of opticall...

1996
A. Spinelli H. Dautet

This paper reports an experimental characterization of the EG&G SPCM-AQ single-photon avalanche diode module with an active quenching bias circuit that gives a dead time of ;35 ns for use in high count rate, fast timing applications. A quantum efficiency of .70% and an optimal timing jitter with a full width at one-thousandth maximum of 1.5 ns is obtained if the light is tightly focused to a sp...

Journal: :Optics express 2014
Xiao Meng Chee Hing Tan Simon Dimler John P R David Jo Shien Ng

An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs, the device breakdown voltage varied by < 0.2 V over the 30 K temperature range studied, which corresponds to a temperature coefficient of...

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