We report the results of time-integrated and time-resolved photoluminescence spectroscopy on red-emitting self-organized InAs/Al0.6 Ga0.4As quantum dots with indirect barriers. Spatially resolved PL measurements confirm that carriers excited in the Al0.6Ga0.4As barriers are consistent with a carrier hopping process between dots, a result also supported by time-resolved PL experiments. q 2003 El...

A series of solid nanocomposites containing CdS nanoparticles in polymeric matrix with varied conditions on the interface particle/polymer was fabricated and studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR) methods. The results revealed interface-related features in both PL and ODMR spectra. The revealed paramagnetic centers are concluded to be involved in the ...

GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc 3 0.56mJ/cm ).

Time-dependent photoluminescence (PL) enhancement, blue shift, and photobleach were observed from the thiol-capped CdTe quantum dots (QDs) ingested in mouse myoblast cells and human primary liver cancer cells. It was revealed that the PL blue shift resulted from the photooxidation of the QD core by singlet oxygen molecules formed on the QD core surface.

Organosilane-functionalized carbon dots (SiC-dots) were prepared by a simple one-pot hydrothermal approach. The photoluminescence (PL) properties of the SiC-dots revealed a reversible response toward the temperature (293-343 K). Through Si-O-Si bonding, temperature-sensitive PL SiC-dot films could be easily fabricated on glass substrates.

The anti-Stokes photoluminescence (PL) of perovskite CsPbBr 3 nanocrystals in a fluorophosphate glass matrix has been found and experimentally studied upon optical excitation to the low-energy edge band. intensity PL depends linearly on pumping power increases rapidly with increasing temperature. A simple three-level model is proposed that describes well main regularities observed phenomenon. K...

Silicon reach-silicon-oxide (SRSO) film containing silicon nanoclusters was obtained by the reactive magnetron sputtering. Photoluminescence (PL) spectra were measured as a function of temperature at different excitation wavelengths and additionally at different excitation power densities. Obtained PL spectra characterize by two emission bands centered at 1.6 and 2.4 eV. For these bands, temper...

We report on a theoretical study of photoluminescence (PL) of the resonant one-dimensional photonic crystals, or the near-Bragg quantum-well structures. The PL spectral intensity is found by including random sources in the equations for the exciton dielectric polarization and introducing the discrete Green’s function. The structures without and with the dielectric contrast are considered. The p...

Si quantum dots (SiQDs) based nanospheres (SiNSs) were prepared via a novel synthetic strategy. These SiNSs were demonstrated to possess unique dot spacing dependent photoluminescence (PL) up-conversion and surface dependent (N modified surface) down-converted PL. It was demonstrated that a small distance between SiQDs (<5 nm) is the necessary condition for the PL up-conversion of SiNSs, while ...

Three different InAs quantum dots QDs in an InGaAs/GaAs quantum well were formed and investigated by time-resolved and temperature dependent photoluminescence PL . A strong PL signal emitting at 1.3 m can be obtained at room temperature with a full width at half maximum of only 28 meV. Dots-in-a-well structures result in strong stress release and large size InAs QDs which lead to narrowing and ...