WO3 vertical plate-like arrays provide a direct pathway for charge transport, and thus hold great potential as working electrodes for photoelectrochemical (PEC) water splitting. However, surface recombination due to surface defects hinders the performance improvement. In this work, WO3 vertical plate-like arrays films with HfO2 passivation layer were fabricated via a simple dip-coating method. ...

In the present study, the effects of growth defects and chromium content loss on the degradation of corrosion and passivation of cathodic arc evaporation (CAE-PVD) of stainless steel coating were investigated in 2 M sulphuric acid solution. EDS analysis indicated that the micro-particles were obtained during the coating growth. In addition, it was detected that the growth defects had poor adhes...

The reduction in electronic recombination losses by the passivation of silicon surfaces is a critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) emerged as a novel solution for the passivation of pand n-type crystalline Si (c-Si) surfaces. Today, high efficiencies have been realized by the implementation of ul...

ABSRACT Germanium offers higher electron and hole mobility than silicon, making it an attractive option for future high-performance MOSFET applications. To date, Ge p-channel device behavior has shown promise, with many reports of measured hole mobilities exceeding that of Si. However, Ge n-channel devices have shown poor performance due to an asymmetric distribution of interface state density ...

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

In this paper, (NH4)2S and Na2S were used as passivating agent for the sulphuration treatment of GaSb. Although the oxide layer can be removed by both (NH4)2S and Na2S, the etching rate of Na2S was faster than (NH4)2S, which caused the high RMS. After passivation treatment, PL instensity of GaSb increased, however, if the passivation time was too long, PL instensity would decrease. At low tempe...

A technique using the sudden change in the geometrical shape of metal line is considered for effective accumulation of atoms, and therefore fabrication of micro/nano materials utilizing electromigration. The experimental sample of Al metal line is formed on a TiN layer and covered with a SiO2 passivation layer. Thereafter, the sample is placed on a ceramic heater under atmospheric conditions, a...

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochr...

During the electrochemical analysis or disposal of most of phenolic compounds, insulated polymeric substrates are created and cover the electrode surface. This can cause the signal current to decay over time, which is called electrode fouling or electrode passivation. This paper describes a model based on the potential drop across the fouling layer that is helpful for deeper understanding of th...