Recently Francisco Presas Mata constructed the first examples of closed contact manifolds of dimension larger than 3 that contain a plastikstufe, and hence are non-fillable. Using contact surgery on his examples we create on every sphere S, n ≥ 2, an exotic contact structure ξ − that also contains a plastikstufe. As a consequence, every closed contact manifold (M, ξ) (except S) can be converted...

We report metal/p-Si contact barrier modification through the introduction of either "isolated" or "nonisolated" tilted-target-sputtered sub-2 nm platinum nanoparticles (Pt NPs) in combination with either a 0.98 nm Atomic Layer Deposited Al2O3 or a 1.6 nm chemically grown SiO2 dielectric layer, or both. Here, we study the role of these Pt NP's size dependent properties, i.e., the Pt NP-metal su...

Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection pr...

This work describes the improved uniformity of short gate length (sub100nm) T-gate lithography observed for InP HEMT devices through the development of a nonannealed ohmic contact process. The incorporation of such a process allows the reversal of ohmic and gate levels as part of a standard device process flow. This eliminates fluctuations in the gate geometry that result from the spinning of g...

The development of electrical contacts to silicon carbide with low specific resistivity and stability is a critical requirement for harsh environment MEMS applications. In this paper, we present a novel method to lower the ohmic contact resistivity and enhance the stability of Pt contacts to polycrystalline 3C-SiC (poly-SiC) operated at elevated temperatures. In particular, nanocrystalline grap...

We used large area, monolayer graphene epitaxially grown on SiC (0001) as contact electrodes for polymer nanofiber devices. Our fabrication process, which avoids polymer resist residues on the graphene surface, results in graphene-polyaniline nanofiber devices with Ohmic contacts and electrical conductivity comparable to that of Au-nanofiber devices. We further checked the thermal stability of ...

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm(2). The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt o...

In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. I...

An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range o...