نتایج جستجو برای: nitride semiconductors
تعداد نتایج: 41330 فیلتر نتایج به سال:
Electronic states in boron-nitride and boron-carbon-nitride nanoribbons with zigzag edges are studied using the extended Hubbard model with nearest neighbor Coulomb interactions. The charge and spin polarized states are considered, and the phase diagram between two states is obtained. Next, the electric capacitance is calculated in order to examine the nano-functionalities of the system. Due to...
Electronic states in boron-nitride and boron-carbon-nitride nanoribbons with zigzag edges are studied using the extended Hubbard model with nearest neighbor Coulomb interactions. The charge and spin polarized states are considered, and the phase diagram between two states is obtained. Next, the electric capacitance is calculated in order to examine the nano-functionalities of the system. Due to...
Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices can not handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, n...
Abstract III-nitride semiconductors are promising optoelectronic and electronic materials have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, superconductivity, implanted into III-nitrides to expand their capability next-generation semiconductor quantum technologies. The recent experimental demonstration of ferroelectricity nitr...
The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface-exploited in high-power/high-frequency electronics-and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the m...
Cathodoluminescence (CL) hyperspectral imaging—the acquisition of a full optical emission spectrum at each pixel of an image—has become firmly established as a measurement mode in scanning electron microscopy (SEM) [1]. CL is sensitive to the structural, compositional and electrical properties of a sample, and the inherent multimode nature of SEM makes it possible to combine CL with other techn...
Power devices are increasingly important and more complex, often using wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). The need for high voltage, high power, and fast switching devices operating in harsh environments require accurate design and performance optimization for both device and circuit operation. The best solution is complete integration from process f...
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