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Electronic performance predictions of modern nanotransistors require nonequilibrium Green’s functions including incoherent scattering on phonons as well as inclusion of random alloy disorder and surface roughness effects. The solution of all these effects is numerically extremely expensive and has to be done on the world’s largest supercomputers due to the large memory requirement and the high ...
Most aggressively scaled metal-oxide-semiconductor field-effect (MOSFET) transistors have characteristics dimensions entering now in the nanometer scale [1]. In this context, multi-gate nanowire MOSFET’s are considered as the most promising candidates for ultimate CMOS integration, because of their efficient electrostatic coupling between the surrounding gate electrode and the conduction channe...
We present a theory for Raman scattering by current-carrying molecular junctions. The approach combines a nonequilibrium Green's function (NEGF) description of the nonequilibrium junction with a generalized scattering theory formulation for evaluating the light scattering signal. This generalizes our previous study [M. Galperin and A. Nitzan, Phys. Rev. Lett. 95, 206802 (2005); J. Chem. Phys. 1...
Graphene's isolation launched explorations of fundamental relativistic physics originating from the planar honeycomb lattice arrangement of the carbon atoms, and of potential technological applications in nanoscale electronics. Bottom-up fabricated atomically-precise segmented graphene nanoribbons, SGNRs, open avenues for studies of electrical transport, coherence, and interference effects in m...
With device dimensions shrinking to nanoscales, quantum effects such as confinement and tunneling become significant in electron transport. In addition, scattering effects such as electron-phonon scattering, electron-impurity scattering also affect carrier transport through small-scale devices. Currently most of the commonly used transport models are particle based with quantum corrections inco...
In this article, we study the coupled mode space approach to nonequilibrium Green’s function NEGF simulation. When the lateral confinement of nanoscale devices changes abruptly and the correlation functions arising from coupled mode effects are improperly evaluated in the current and charge density calculations, it becomes difficult to solve nonequilibrium Green’s function equations self-consis...
Abstract Metal contacts form one of the main limitations for introduction 2D materials in next-generation scaled devices. Through ab-initio simulation techniques, we shed light on fundamental physics and screen several 3D top side contact metals. Our findings highlight that a low semiconducting-metal resistance can be achieved. By selecting an appropriate metal, demonstrate both ohmic or small ...
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