We report an experimental study of the electrical properties of single-barrier Hg 1 _ x Cdx Te heterostructures grown by molecular-beam epitaxy. At high temperature, the measured current is interpreted to be the sum of thermionic and tunneling hole currents. This analysis is applied to data from each of three samples, yielding values of the HgTe-CdTe valence-band discontinuity between 290 ± 50 ...

Two-terminal electronic devices that exhibit voltage-controlled threshold switching (TS) via negative differential resistance (NDR) are important for many emerging applications. Pickett and Williams developed what has become a well-known physics-based model nanoscale exhibiting NDR due to reversible insulator-metal phase (Mott) transition. The Mott memristor couples changes in electrical Joule ...

The demand for increased miniaturization of integrated circuits has opened the way to the emerging field of molecular electronics. Recent experimental studies have established that single molecules or a finite ensemble of self-assembled molecules can perform the basic functions of conventional electronic components (i.e., transistors, wires and diodes). In particular, it has been demonstrated t...

One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as experimentally, but should be further stud...

Thin (12-nm) self-assembled films of the insulating molecule 11-mercaptoundecanoic acid (MUA) were contacted by gold electrodes in a sandwich structure. Current-voltage scans of the resulting devices revealed symmetric negative differential resistance (NDR) with peaks at ±3 V and large peak current densities of up to 10 A/cm. Devices could be programmed reversibly into nonvolatile highand low-c...

Quantum electronic devices such as resonant tunneling diodes and transistors are now beginning to be used in ultrafast and compact circuit designs. These devices exhibit negative differential resistance (NDR) and/or negative transconductance in their I-V characteristics and have active dimensions of a few nanometers. Since the conventional drift-diffusion approximation is not valid for simulati...

A new transistor effect is demonstrated in a 120 nm base, bipolar quantum-well, resonanttunneling transistor (BiQuaRTT) . In this BiQuaRTT, a strong, multiple negative differential resistance (NDR) characteristic is obtained at room temperature with highcurrent gain ( > 50). The effect is shown to be the consequence of an asymmetric, quantumwell-base heterostructure whose shape is controlled by...

Introduction: Negative resistance elements are important components in oscillator circuits and form the basis of many other nonlinear circuits. Resonant tunnelling diodes (RTDs) have attracted much attention due to their wide-bandwidth negative differential resistance (NDR), up to hundreds of GHz [1]. Because RTDs can be easily integrated in electronic and optoelectronic circuits, the applicati...

Monostable to Bistable (MOBILE) gates are very suitable for the implementation of gate-level pipelines which can be achieved without resorting to memory elements. MOBILE operating principle is implemented using two series connected Negative Differential Resistance (NDR) devices with a clocked bias. This paper describes and experimentally validates a two-phase clock scheme for such MOBILE based ...