Grain-boundary relaxation in nanocrystalline Fe was studied by high-resolution transmission electron microscopy HREM , and its effect on plasticity was characterized by nanoindentation. Samples with grain size of 9.8 nm were synthesized by mechanical attrition and subsequently annealed at low temperatures 80 and 100 °C without affecting the grain size. While the hardness is not significantly af...

Multilayers of Ni-2lAl and Ni-ZOCr-1OAl were subjected to ion beam mixing using 350 keV Ni+ ions and/or thermal annealing at 440 o C to study the development of grain growth and phase morphology. Two film thicknesses of Ni-21 Al (60 and 120 nm) were investigated. Both thermal annealing and irradiation resulted in grain growth in the Ni-21Al samples. Grain size increased by a factor of 7 after i...

Garnet-like oxides having the formula Li7+X−YLa3−XAXZr2−YNbYO12 (A = Sr or Ca) were synthesized using a solid-state reaction, and their bulk and grain boundary resistivities were assessed by AC impedance measurements. A difference in grain boundary resistivity was identified between Sr and Ca materials, and so the grain boundaries were examined using electron probe microanalysis (EPMA). The dif...

At microscale, the large ratio between mean grain size of the material and specimen dimension cause an increasing influence of single grain forming behaviour on the overall forming process. Thus the forming behaviour of these parts can no longer be regarded as to be homogeneous. This leads to a change in the material behaviour resulting in a large scatter of forming results, e.g. varying cup he...

Different experimental and+ theoretical determinations of the rigid body translation t in the Z 3 (211) tilt grain boundary in silicon aFe compared. A calculation using Keating's potential gives a t vector and an atomic structure in very good agreement with Paxton and Suttonts tight binding calculation and with experimental determinations on germanium by Bourret et al. his confirms the validity...

Tin sulfide (SnS) is a semiconductor material with both an indirect and direct bandgap at 1.1 eV and 1.3 eV respectively. Due to the availability of tin and sulfur, SnS is seen as a feasible alternative to the thin film CIGS and CdTe solar cells. With a direct bandgap of 1.1 eV and the ability to be produced as a thin film, the SnS solar cell should achieve high levels of efficiency of approxim...

Using fumigation toxicity data of 11 natural and synthetic cyanohydrins to house fly (Musca domestica) and a stored-product pest, the lesser grain borer (Rhyzopertha dominica), the quantitative structure-activity relationships (QSAR) of cyanohydrins were examined by Oxford Molecular CAChe 3.2 and Microsoft Excel. This analysis used eight physicochemical parameters. Correlation between the LC(50...

Dynamic reconfiguration is possible on both fine-grain and coarse-grain architectures. One of the used methodology used consists in the use of multi-context architectures. Unfortunately, the multiple contexts bring power and area overhead. This paper introduces the Dynamic Unifier and reConfigurable blocK (DUCK) concept, a new structure to perform efficiently dynamic reconfiguration on both cus...

Recent advances both in experimental instrumentation and computing power have made it possible to interrogate the distribution of internal interfaces in polycrystals and the three dimensional structure of the grain boundary network with an unprecedented level of detail. The purpose of this paper is to review techniques that can be used to study the mesoscopic crystallographic structure of grain...

The (relative) energies of symmetric tilt grain boundaries in a strongly segregated lamellar block copolymer are determined by analysis of the dihedral angles at grain-boundary triple junctions. The analysis reveals two regimes: at low and intermediate misorientations (corresponding to a tilt-angle range 0≤θ≤85°) the grain-boundary energy is found to depend on the tilt angle as E(θ)∼θ(x), with ...