Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect transistor that is able to control the flow of heat exchanged by evanescent thermal photons between two bodies. By changing the gate temperature around its critic...

Realization of a robust nanotube-heterostructure tunneling transistors [Solid State Comm. 116, 569 (2000)] requires the difficult formation [Science 293, 76 (2001)] of a central nanoscale barrier separating a pair of outside metallic leads. Here I suggest an alternative surface-based assembly based on self-organization of one-dimensional metallic states on oxides and trapping well-resolved reso...

It is shown that quantum interference can be employed to create an exciton transistor. An applied potential gates the quasi-particle motion and also discriminates between quasi-particles of differing binding energy. When implemented within nanoscale assemblies, such control elements could mediate the flow of energy and information. Quantum interference can also be used to dissociate excitons as...

The semiconductor industry is moving towards nanoscale technology with IC transistor counts attaining the hundreds of millions. Systems-on-chip are reaching a level of complexity at which it is essential to test and debug the hardware and software of the entire system at operational speed before incurring the mask costs for prototype fabrication. System prototyping using an FPGA-based emulation...

Research on nanoscale semiconductor devices will elicit a novel understanding of biological systems. First, we discuss why it is necessary to build interfaces between cells and semiconductor nanoelectronics. Second, we describe some recent molecular biophysics studies with nanowire field effect transistor sensors. Third, we present the use of nanowire transistors as electrical recording devices...

We report that the electrical conductance between closely spaced gold electrodes in acid solution can be turned from off [insulating; I] to on [conducting; C] to off again by monotonically sweeping a gate voltage applied to the solution. We propose that this ICI transistor action is due to an electrochemical process dependent on nanoparticles etched from the surface of the gold electrodes. Thes...

Electromechanical devices are rapidly being miniaturized, following the trend in commercial transistor electronics. Miniature electromechanical devices--now with dimensions in the deep sub-micrometer range--are envisioned for a variety of applications as well as for accessing interesting regimes in fundamental physics. Among the most important technological challenges in the operation of these ...

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-...

Integrated circuit design is entering an era of truly nanoscale transistors with minimum device geometries now at 32nm and soon to be at 25nm. While actual transistor and logic gate sizes are many times the minimum lengths possible, logic elements are becoming increasingly small and more closely packed together. There is now an increasing possibility of getting coupling errors where nearby logi...