Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to submicron/nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform ...

Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the...

A three-dimensional simulation methodology allowing statistical study of the direct tunnelling gate current fluctuations in realistic nano-scale metal–oxide–semiconductor field effect transistors (MOSFETs) is presented. The approach has been applied to study the gate leakage fluctuations due to the combined effect of oxide thickness variation (OTV) and discrete random dopants (RD) in an example...

BACKGROUND Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transisto...

The classic approach for determining insulating resistance by using commercial testers is not reliable for testing different types of insulation, especially for cables with one conductor and nanoelectronic oxide-based devices (nanotransistors). In this paper an alternative low-voltage method for measuring insulation resistance based on strongly increased current sensitivity is proposed. The pro...

1569-190X/$ see front matter 2010 Elsevier B.V doi:10.1016/j.simpat.2010.05.002 * Tel./fax: +4021 4024886. E-mail addresses: [email protected], cr682003 The SOI transistors permanently offer new candidates as nanodevices. The nothing on insulator NOI transistor was recently derived from the nano SOI–MOSFET family. Their output characteristics were theoretical modelled with an exponential law,...