نتایج جستجو برای: n type semiconductor
تعداد نتایج: 2233675 فیلتر نتایج به سال:
The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonst...
Using first-principles calculations, we study the structural and electronic properties of bilayer SnS/graphene, SnS/bilayer graphene (AA-stacked), (AB-stacked) monolayer SnS/ graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronic all components vdW heterostructures are well preserved, which reflects weakness interaction. In cases SnS/graphene an Ohmic contact is formed can be t...
Thin-film solar cells made from earth-abundant, inexpensive, and non-toxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and non-toxic solar cells. SnS has always been observed to be a p-type semiconduc...
Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic "buried interface" problem that has traditionally been difficult to address. Here we address the question...
Control of charge carrier distribution in a gated channel via a dielectric layer is currently the state of the art in the design of integrated circuits such as field effect transistors. Replacing linear dielectrics with ferroelectrics would ultimately lead to more energy efficient devices as well as the added advantage of the memory function of the gate. Here, we report that the channel-off/cha...
Utilizing modeling, experiments, and statistics for the analysis of water-splitting photoelectrodes†
A multi-physics model of a planar water-splitting photoelectrode was developed, validated, and used to identify and quantify the most significant materials-related bottlenecks in photoelectrochemical device performance. The model accounted for electromagnetic wave propagation within the electrolyte and semiconductor, and for charge carrier transport within the semiconductor and at the semicondu...
Mg alloys have a vast usage where weight reduction is really significant since they do the features really well for materials of ultra-light weight. However, Mg is inherently a reactive metal and its alloys generally possess quite weak corrosion resistance that widely restricts their technological usages, especially in some rough service conditions. Despite, many investigations on the passive a...
The (Bi2Te3)0.96(Bi2Se3)0.04 is an n-type thermoelectric semiconductor for using in thermoelectric cooling systems. Single crystal of this composition was grown by Zone Melting Method and thermoelectric power (α 2 σ) along the crystal growth where α is the Seebeck coefficient and σ is the electrical conductivity was measured. In this measurement a gradient along length of the prepared crystalli...
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