نتایج جستجو برای: n type semiconductor

تعداد نتایج: 2233675  

2014
Raj K. Vinnakota Dentcho A. Genov

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonst...

Journal: :Applied Surface Science 2023

Using first-principles calculations, we study the structural and electronic properties of bilayer SnS/graphene, SnS/bilayer graphene (AA-stacked), (AB-stacked) monolayer SnS/ graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronic all components vdW heterostructures are well preserved, which reflects weakness interaction. In cases SnS/graphene an Ohmic contact is formed can be t...

2012
Rupak Chakraborty Sang Bok Kim Steven M. Heald Tonio Buonassisi Roy G. Gordon Prasert Sinsermsuksakul

Thin-film solar cells made from earth-abundant, inexpensive, and non-toxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and non-toxic solar cells. SnS has always been observed to be a p-type semiconduc...

Journal: :Journal of the American Chemical Society 2012
Stephanie R Walter Jangdae Youn Jonathan D Emery Sumit Kewalramani Jonathan W Hennek Michael J Bedzyk Antonio Facchetti Tobin J Marks Franz M Geiger

Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic "buried interface" problem that has traditionally been difficult to address. Here we address the question...

2015
I. B. Misirlioglu M. Yildiz K. Sendur

Control of charge carrier distribution in a gated channel via a dielectric layer is currently the state of the art in the design of integrated circuits such as field effect transistors. Replacing linear dielectrics with ferroelectrics would ultimately lead to more energy efficient devices as well as the added advantage of the memory function of the gate. Here, we report that the channel-off/cha...

2016
Yannick K. Gaudy

A multi-physics model of a planar water-splitting photoelectrode was developed, validated, and used to identify and quantify the most significant materials-related bottlenecks in photoelectrochemical device performance. The model accounted for electromagnetic wave propagation within the electrolyte and semiconductor, and for charge carrier transport within the semiconductor and at the semicondu...

Mg alloys have a vast usage where weight reduction is really significant since they do the features really well for materials of ultra-light weight. However, Mg is inherently a reactive metal and its alloys generally possess quite weak corrosion resistance that widely restricts their technological usages, especially in some rough service conditions. Despite, many investigations on the passive a...

کاوه‌ای, قاسم, احمدی, کامران , سید فرجی, لیلا , ‌کرمی, مسعودالله,

The (Bi2Te3)0.96(Bi2Se3)0.04 is an n-type thermoelectric semiconductor for using in thermoelectric cooling systems. Single crystal of this composition was grown by Zone Melting Method and thermoelectric power (α 2 σ) along the crystal growth where α is the Seebeck coefficient and σ is the electrical conductivity was measured. In this measurement a gradient along length of the prepared crystalli...

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