When in vivo proton dosimetry is performed with a metal-oxide semiconductor field-effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth-output curve f...

Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling ...

This paper focuses on the role of the power MOSFET in achieving high-efficiency converter design. It provides a brief overview of current low-voltage MOSFET trench technologies, along with a discussion about onresistance versus gate charge trade-offs for MOSFETs optimized for use as control or synchronous switches. It covers the importance of the integrated Schottky diode (SyncFETTM MOSFET) in ...

Double gate MOSFET is widely used for sub-50nm technology of transistor design .They have immunity to short channel effects, reduced leakage current and high scaling potential. The single gate Silicon–on-insulator (SOI) devices give improved circuit speed and power consumption .But as the transistor size is reduced the close proximity between source and drain reduces the ability of the gate ele...

We explore the use of InAs as an alternative to nanoscaled Si for future generations of high bandwidth MOSFET-based circuits. InAs has a high electron mobility. Its vsat is theoretically 20 times higher than silicon's. Our modeling shows that an HBT could achieve fT and fmax approaching 1 THz for an emitter-base and collector-base dimension of 0.5 μm x 4.0 μm (2 μm). A simple MOSFET model predi...

Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to submicron/nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform ...

Nowadays, electronic circuits’ time to market is essential, with engineers trying reduce it as much possible. Due this, simulation has become the main testing concept used in electronics domain. In order perform of a circuit, behavioral model must be created. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are semiconductor devices found multitude circuits, and they also power swit...