نتایج جستجو برای: mosfet

تعداد نتایج: 3069  

2014
Ajay Kumar Neha Gupta Rishu Chaujar

The noise assessment of Novel Transparent Gate Recessed Channel MOSFET has been investigated based on the simulated result from ATLAS device simulation. TCAD simulation results show TGRC-MOSFET divulges Conventional Recessed Channel (CRC)-MOSFET in terms of reduction in noise figure, cross correlation, noise conductance and parasitic capacitances. It also achieves higher optimum source impedanc...

2008
Md Nurul Amin Bern Norrlinger Robert Heaton Mohammad Islam

We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobile MOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBC...

سارا حیدری علی اصغر اروجی

این مقاله طرح جدیدی برای ساختار ترانزیستورهایSOI-MOSFET به عنوان راهکاری مناسب برای کاهش اثرات مخرب پدیده خودگرمایی ارائه می دهد. ایده اصلی در ارائه این ساختار نوین٬ استفاده ازماده Si3N4 می باشد که دارای هدایت گرمائی بالاتری نسبت به اکسید سیلیسیم است. همچنین به کمک شبیه سازی دو بعدی٬ عملکرد این ساختار مورد تجزیه و تحلیل قرار گرفته است. نتایج بدست آمده نشان می دهند که ساختار SOI-MOSFET چند لای...

In biaxially strained p-MOSFET with Si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. In this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . Using simulation the impact of this method on the parasit...

2011
Ryosuke Kohno Kenji Hotta Taeko Matsuura Kana Matsubara Shie Nishioka Teiji Nishio Mitsuhiko Kawashima Takashi Ogino

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth-dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high-bias voltages. In order to accurately measure dose distributions, we developed a practical method for correctin...

2001
P. Bergveld

This paper describes the detection principle of a hydrogen peroxide sensor based on the electrolyte metal oxide semiconductor field effect transistor (MOSFET) and possibilities of using different types of redox materials as the gate material for the sensor with respect to the sensitivity and detection limit. After discussing the fundamentals of hydrogen peroxide detection and a short descriptio...

2013
VIRANJAY M. SRIVASTAVA K. S. YADAV G. SINGH

We present an analytical and continuous dc model for undoped cylindrical surrounding double-gate (CSDG) MOSFETs for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified charge control model developed for thi...

2007
Lakshmi Reddy Gopi Reddy

HID lamps are used in applications where high luminous intensity is desired. They are used in a wide range of applications from gymnasiums to movie theatres, from parking lots to indoor aquaria, from vehicle headlights to indoor gardening. They require ballasts during start-up and also during operation to regulate the voltage and current levels. Electronic ballasts have advantages of less weigh...

Journal: :Electronics 2022

This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprised active and dummy gates that divided horizontally; the diode operated through gate p-base N+ source regions at bottom of gate. Because bult-in was p...

2006
I. Pawel R. Siemieniec M. Rösch F. Hirler R. Herzer

The avalanche behavior of a new Trench Power MOSFET was investigated by means of measurement and electro-thermal simulation. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects are proposed. They are in good agreement with measured results. Furthermore, t...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید