Transition metal dichalcogenides are an exciting class of new absorber materials for photovoltaic applications due to their unique optoelectronic properties in the single few-layer regime. In recent years, these have been intensively studied, often utilizing conventional substrates such as sapphire and silicon dioxide on silicon. This study investigates optical molybdenum disulfide (MoS2) mono-...

in this work the effects of various methods of agitation on the properties of electroless ni-p-mos2 composite coatings were investigated. magnetic stirring as well as purging the solution with gas (air, oxygen, nitrogen) were used. plating rate, chemical composition, mos2 distribution, and hardness of the deposit were measured. topography of coating was studied with metallography and scanning e...

To overcome the limitations of polymers, such as trade-off relationship between water permeance and solute rejection, well difficulty functionalization, research on nanomaterials is being actively conducted. One representative graphene, which has a two-dimensional shape chemical tunability. Graphene usually used in form graphene oxide treatment field because it advantages high functionality its...

Molybdenum disulfide (MoS2) has great potential as a two-dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents charge transfer from neighboring dielectrics can lead device variability instability. Aluminum oxide (Al2O3) is widely used an encapsulation layer in (opto)-electronics, it leads detrimental n-doping MoS2. Here, th...

Unique MoS2-SnS2 heterogeneous nanoplates have successfully in-situ grown on poly(3-(1-vinylimidazolium-3-yl)propane-1-sulfonate) functionalized polypyrrole/ graphene oxide (PVIPS/PPy/GO). PVIPS can attract heptamolybdate ion (Mo7O246?) and Sn4+ as the precursors by ion-exchange, resulting in simultaneous growth of 1T’-MoS2 berndtite-2T-type hexagonal SnS2 interfacial induced effect PVIPS. The ...

In this paper, MoS2 and Ni-MoS2 crystal layers were fabricated by the chemical vapor transport method with iodine as the transport agent. Two direct band edge transitions of excitons at 1.9 and 2.1 eV were observed successfully for both MoS2 and Ni-MoS2 samples using temperature-dependent optical reflectance (R) measurement. Hall effect measurements were carried out to analyze the transport beh...

The photocatalytic activity of silver-based catalysts containing different amounts molybdenum disulfide (MoS2; 5, 10 and 20 wt.%) was evaluated by the degradation antibiotic ciprofloxacin production hydrogen via water splitting. All silver (Ag)-based degraded more than 70% in 60 min. catalyst that exhibited best result 5%Ag@TiO2-P25-5%MoS2, with ca. 91% degradation. control experiments stabilit...

MoS2/rGO composites were synthesized by hydrothermal method from the precursors of MoS2 and reduced graphene oxide (rGO) prepared in former steps. The influence synthesis conditions including temperature mass ratio to rGO on structure, morphology, optical absorption capacity was systematically investigated using physicochemical characterizations. photocatalytic performance as-prepared samples d...

Articles you may be interested in Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Appl. High-performance organic thi...

Recently, Molybdenum Disulphide (MoS2) promising candidate for low-power digital appli to monolayer (1L) MoS2, few-layer MoS2 (FL-M due to its higher density of states (DOS). Howeve study of FL-MoS2 field-effect-transistor (FET) paper, we report a high-performance FL-MoS2 FE contact resistance (~0.8 kΩ.μm) that is close to t silicon contacts in CMOS technology. A cor performance and the number ...