New diode structures without the field-oxide boundary across the p/n junction for ESD protection are proposed. A NMOS (PMOS) is especially inserted into the diode structure to form the NMOS-bounded (PMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. The proposed N(P)MOSbounded diodes can provide more efficient ESD protection to ...

The wideband noise characteristics of a PbEuSe molecular beam epitaxy diode laser have been measured up to 500 MHz. The cutoff of the frequency dependent (1/f type) laser noise contribution was found to be 170 MHz for this particular laser. Above this cutoff frequency the photon shot noise dominates, as was demonstrated. A noise reduction of more than 2 orders of magnitude was observed in the s...

Measurements of the frequency stability of a far-infrared molecular laser have been made by mixing the harmonic of an ultrastable microwave source with a portion of the laser output signal in a terahertz (THz) Schottky diode balanced mixer. A 3 GHz difference-frequency signal was used in a frequency discriminator circuit to lock the laser to the microwave source. Comparisons of the short- and l...

this article is a report of calculation and measurements of a p+-n insb photo-diode leakage current fabricated by mesa on the basis of the calculation and measurement of different leakage currents in insb photo-diode along with its variation it shows that at relatively low reverse biases (up to about 300 mv) g-r and shunt current are dominant. but at high reverse biases the tunneling current do...

We report 11 μs of molecular dynamics simulations of the electron-transfer reaction between primary and secondary quinone cofactors in the bacterial reaction center. The main question addressed here is the mechanistic reason for unidirectional electron transfer between chemically identical cofactors. We find that electron is trapped at the secondary quinone by wetting of the protein pocket foll...

We have investigated the transport properties in the direction perpendicular to the substrate of regioregular polys3-hexyl-thiophened of different molecular weights sMWd in a diode geometry. In these devices, which exhibit space-charge-limited behavior, we find that the mobility values at room temperature increase from 1.33310−5 cm2/V s to 3.30310−4 cm2/V s as the MW is increased from 2.9 to 31...

We examine structure–function relationships in a series of N-phenylbenzamide (NPBA) derivatives by using computational modeling to identify molecular structures that exhibit both rectification and good conductance together with experimental studies of bias-dependent single molecule conductance and rectification behavior using the scanning tunneling microscopy break-junction technique. From a la...

Autonomous fluidic components that function at ultra-low Reynolds number (e.g., Re < 0.1) are critical to the advancement of integrated microfluidic circuitry. Here we present a single-layer microfluidic “disc” diode, which includes a free-moving cylindrical “disc” – constructed in situ using optofluidic lithography – that is transported to or away from the entrance of a docking channel to obst...

The effect of different arsenic species (As2 or As4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p + n n + devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipula...

A heterostructure device consisting of nitrogendoped Mg0.12Zn0.88O and gallium-doped ZnO thin films was grown on c-plane sapphire substrate using RF plasmaassisted molecular beam epitaxy. Current–voltage and photocurrent characteristics indicate the formation of a p–n junction. Random lasing behavior with lasing modes centered at 356 nm was observed. A low-threshold current of 6 mA was determin...