The compensation of LTI systems and the evaluation of the according uncertainty is of growing interest in metrology. Uncertainty evaluation in metrology ought to follow specific guidelines, and recently two corresponding uncertainty evaluation schemes have been proposed for FIR and IIR filtering. We employ these schemes to compare an FIR and an IIR approach for compensating a second-order LTI s...

A survey has been performed to determine the measurement requirements of space power related parameters for anticipated SDI systems. These requirements have been compared to present state-of-the-art metrology capabilities as represented by the calibration capabilities of the National Institute of Standards and Technology. Metrology areas where present state-of-the-art capabilities are inadequat...

This paper presents an overview of foundational concepts and techniques used in metrology of form errors such as straightness, flatness, circularity, sphericity, and cylindricity. While there exists a significant body of literature on form-error metrology, to the best of our knowledge, no review paper has been written on this topic. Our aim here is to (i) present a unified view of the mathemati...

A statistical metrology framework is used to identify systematic and random sources of interconnect structure (ILD thickness) variation. Electrical and physical measurements, TCAD simulations, design of experiments, signal processing, and statistical analysis are integrated via statistical metrology to deconvolve ILD thickness variation into constituent variation sources. In this way, insight i...

65 nm and 45 nm silicon devices will utilize compositionally critical processes for gate dielectrics, capacitor dielectrics, gate and capacitor electrodes, and ultra shallow junction layers. For example, small changes in nitrogen composition have been correlated with unacceptable shifts in electrical properties of devices with SiOxNy gate dielectrics. Present optically-based metrology technolog...

In classical estimation theory, the central limit theorem implies that the statistical error in a measurement outcome can be reduced by an amount proportional to n by repeating the measures n times and then averaging. Using quantum effects, such as entanglement, it is often possible to do better, decreasing the error by an amount proportional to n. Quantum metrology is the study of those quantu...

This paper demonstrates the application of two methods of separating spindle error motion from artifact roundness on a spindle with less than five nanometers radial error. Two error separation methods, reversal and multiprobe, were each applied to data taken on two different test stands allowing direct comparison of the four combinations of hardware and separation algorithm. Because the theory ...

Fleming, Leigh, Blunt, Liam, Robbins, David and Elrawemi, Mohamed (2013) Characterisation techniques to assess functional properties of barrier coatings for flexible PV substrates. In: Proceedings of Laser Metrology and Performance X 10th International Conference and Exhibition on Laser Metrology, Machine Tool, CMM & Robotic Performance. LAMDAMAP 2013 . EUSPEN, Buckinghamshire, UK, pp. 59-69. I...

Real-time, in situ chemical sensing has been applied to achieve reaction metrology and advanced process control in a low pressure tungsten chemical vapor deposition process based on WF6 and SiH4 reactants ~silane reduction process!. Using mass spectrometry as the sensor to detect both product generation (H2) and reactant depletion (SiH4) at wafer temperature of 200–250 °C, these signals provide...