Distributed Bragg reflectors with up to 21 periods consisting of AlN and Al 0.58 Ga 0.42 N layers were grown by metalorganic chemical vapor deposition. A periodic structure and good interface quality was verified by both transmission electron microscopy and X-ray diffraction, and was shown to be dependent on the composition of the underlying AlGaN base layer. Reflectivities of 49.8% at 285 nm a...

GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 8C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with h00.1i direction is observed and is ...

Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region ~220–250 °C!...

The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BH’s) by a three-step technique are outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrat...

All individual phases of the ternary Cr–C–N system including stable and metastable ones can be deposited at low temperature by metalorganic chemical vapor deposition (MOCVD). These growth processes are mainly based on the use of bis(benzene)chromium as chromium source and various co-reactives. Then, from a good control of the reactive gas phase, it is possible to combine these MOCVD processes t...

Quantum-mechanically coupled wen systems consisting of two GaAs wells 30 A thick separated by an Alo.s GIlo.s As barrier whose thickness was varied from 12 to 40 A have been grown by metalorganic chemical vapor deposition. The photoluminescence spectra of these systems indicated the splitting of a degenerate single well state into a doublet state, a symmetrical state, and an antisymmetric state...

The kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (001) have been determined using reflectance difference spectroscopy for real-time monitoring of the phosphorus coverage. The precursor adsorption rate depends linearly on the coverage, and the initial sticking coefficient varies from 0.007 to 0.001 as the temperature increases from 420 to 520 C. T...

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In this study PbTiO 3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Pb precursors, and 0 2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO 3 thin film were investigated. The epitaxial PbTiO 3 thin films were grown on (001) SrTiO 3 substrates at a growth temperature of...