Articles you may be interested in High-quality 1.3 m-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Appl. High detectivit...

Metal compounds and complexes are invaluable precursors for the chemical vapor deposition (CVD) of metal and non-metal thin lms. In general, the precursor compounds are chosen on the basis of their relative volatility and their ability to decompose to the desired material under a suitable temperature regime. Unfortunately, many readily obtainable (commercially available) compounds are not of su...

diamond like carbon (dlc) film was grown by hot filament chemical vapor deposition (hfcvd)technique. in the present work, we investigated the quality of the dlc films groew on the substratesthat were coated with various metal nanocatalysts (au and ni). a combination of ch4/ar/h2 rendersthe growth of carbon nanostructures technique (diamond like carbon). the utilized samples werecharacterized by...

We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge( 111) at temperatures in the range of 400-450 “C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor-liquid-solid mechanism. The liquid-metal phase at the interface is a Au-Ge alloy formed by initial deposition of a thin Au layer above the eutec...