recently, economists have attention to the brain drain as emigration of skilled and educated labor force from developing countries. in this case, we are dealing with one main question is: how brain drain can affect the human capital of source countries? based on existing theories, brain drain can affect the economy of source countries in different ways such as; direct reduction of human capital...

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, SPAD junction optimized with lightly-doped-drain and high-voltage-well layers are provided BCD process. In addition, dielectric over properly etched to reduc...

Asymmetric halo and extension implantations are examined by simulation for their usability in 45 nm and 32 nm-technology high performance SOI-MOSFETs. Tilted implantations from the source side show higher saturation currents and lower drain overlap capacitances, which improve the intrinsic MOSFET power delay product. Furthermore the asymmetry leads to an inverter chain speed benefit. The strong...

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F₄TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F₄TCNQ:pentacene ratio of 1:1 showed co...

Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where simi...

Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...

We study long wavelength magnetic excitations in lightly doped La2-xSrxCuO4 (x</=0.03) detwinned crystals. The lowest energy magnetic anisotropy induced gap can be understood in terms of the antisymmetric spin interaction inside the antiferromagnetic (AF) phase. The second magnetic resonance, analyzed in terms of in-plane spin anisotropy, shows unconventional behavior within the AF state; it le...