We study the Mott transition, antiferromagnetism, and superconductivity in layered organic conductors using the cellular dynamical mean-field theory for the frustrated Hubbard model. A d-wave superconducting phase appears between an antiferromagnetic insulator and a metal for t'/t=0.3-0.7 or between a nonmagnetic Mott insulator (spin liquid) and a metal for t'/t>or=0.8, in agreement with experi...

We give a Clifford+T representation of the Toffoli gate of T -depth 1, using four ancillas. More generally, we describe a class of circuits whose T -depth can be reduced to 1 by using sufficiently many ancillas. We show that the cost of adding an additional control to any controlled gate is at most 8 additional T -gates, and T -depth 2. We also show that the circuit THT does not possess a T -de...

A simple model of the magnetoelectric (ME) effect in cylindrical layered composites is presented. The cylinder is replaced by the effective layered plate structure with effective length, Leff , thickness t and height h. In the axial coupling mode, the effective magnetic field acts along the length direction (Leff ). However, in the vertical coupling mode, the effective magnetic fields act in tw...

In this work, we explore various optimization techniques using bandgap engineering to enhance the performance of tunnel FETs (T-FET) using extensive device simulations. We show that the heterostructure (Si1-γGeγ source or drain) tunnel FET (HT-FET) architecture allows scaling of the device to sub 20 nm gate length regime. N-channel HT-FET is optimized to meet ITRS low standby power and high per...

The in-plane photoelectric (IPPE) effect is a recently discovered [Sci. Adv. 8, eabi8398 (2022)] quantum phenomenon, which enables efficient detection of terahertz (THz) radiation in semiconductor structures with two-dimensional (2D) electron gas. Here, we develop theory the IPPE quasi-one-dimensional systems width 2D conducting channel so small that transverse quantization energy larger than t...

1) Introduction Recent systems are built of MOSFET transistors. Here, MO stands for metal oxide and FE for field effect. This means, that – in contrast to bipolar transistors – the gate is isolated by a metal oxide (today SiO2) and the channel is just controlled by the field through this oxide. Thus theoretically, the principal of MOSFET devices is that there is no current flowing through the g...

A module has been implemented in Field Programmable Gate Array (FPGA) hardware that scans the content of Internet packets at Gigabit/second rates. All of the packet processing operations are performed using reconfigurable hardware within a single Xilinx Virtex XCV2000E FPGA. A set of layered protocol wrappers is used to parse the headers and payloads of packets for Internet protocol data. A con...

ETRI Journal, Volume 30, Number 2, April 2008 In this paper, we describe the fabrication of 3.5-inch QCIF active matrix organic light emitting display (AMOLED) panels driven by thin film transistors, which are produced by an ultra-low-temperature polycrystalline silicon process on plastic substrates. The over all processing scheme and technical details are discussed from the viewpoint of mechan...