نتایج جستجو برای: laser beam annealing

تعداد نتایج: 308051  

Journal: :journal of electrical and computer engineering innovations 2015
mojtaba mansour abadi zabih ghassemlooy david smith wai pang ng

studying gaussian beam is a method to investigate laser beam propagation and abcd matrix is a fast and simple method to simulate gaussian beam propagation in different mediums. of the abcd matrices studied so far, reflection and refraction matrices at various surfaces have attracted a lot of researches. however in previous work the incident beam and the principle axis of surface are in parallel...

Journal: :Sid's Digest Of Technical Papers 2021

Semiconductor blue laser diode was used for crystallization annealing of amorphous silicon backplane flat panel display. The grain size result crystal can be controlled by beam intensity or scanning speed. poly produced BLDA showed same characteristics as ELA in LTPS. Lateral have been BLDA, its field mobility is three times higher than ELA. A multiple head equipment proposed, which high perfor...

In this paper, a free-electron laser (FEL) growth rate with a laser wiggler in which plasma background is used to generate short wavelengths in x-ray regimes, has been investigated theoretically. A linearly polarized laser pulse, due to having short wiggler periods (inrange) is able to produce coherent radiations in x-ray regions and can be applied as a planar wiggler in a FEL. Phase velocity o...

Journal: :Nanoscale 2013
Nicholas A Roberts Jason D Fowlkes Gregory A Magel Philip D Rack

We introduce a laser assisted electron beam induced deposition (LAEBID) process which is a nanoscale direct write synthesis method that integrates an electron beam induced deposition process with a synchronized pulsed laser step to induce thermal desorption of reaction by-products. Localized, spatially overlapping electron and photon pulses enable the thermal desorption of the reaction by-produ...

2003
V. I. Telnov

A tightly focused laser beam (laser wire) is used for measurement of transverse electron beam sizes in storage rings and linear colliders. It is assumed that the laser beam does nothing with the electron beam except Compton scatter-ings which happen with a rather small probability. In reality , electrons crossing the laser beam get kicks (with 100% probability) proportional to the square of the...

Journal: :Physical review. B, Condensed matter 1990
Aroca Sánchez Tanarro López Vázquez

The origin of anisotropy induced by local laser annealing has been studied in amorphous ferromagnetic materials with different magnetostriction constants. The results have been explained using a theoretical model based on the assumption that the origin of the induced anisotropies are internal stresses produced by inhomogeneous heat flows during the local laser annealing. The induced anisotropie...

Jones matrix computation is one of the widely used methods in nonlinearitycalculation in laser interferometers. In this paper, the nonlinearity error in developedthree-longitudinal mode heterodyne interferometer (DTLMI) has been mathematicallymodeled at various speeds, by using Jones matrix calculations. This review has been donedespite the fact that simultaneously the main factors including no...

Journal: :journal of plant physiology & breeding 2011
seyed ahmad sadat noori leila ferdosizadeh ali izadi-darbandi seyed mohammad mehdi mortazavian saeedeh saghafi

laser is one of the sources that induce a biological effect in higher plants. the positive effect of laser on some crops has been proved. this research was carried out to study the effect of laser radiation on the accumulation of proline in spring wheat (triticum aestivum cv. kavir) under different nacl treatment levels. semi-coherent red beam, infrared beam and one-second harmonics of neodymiu...

Journal: :Nanotechnology 2011
Chia-Chi Chang Haitian Chen Chun-Chung Chen Wei-Hsuan Hung I-Kai Hsu Jesse Theiss Chongwu Zhou Stephen B Cronin

We study the effect of polarized laser annealing on the crystalline structure of individual crystalline-amorphous core-shell silicon nanowires (NWs) using Raman spectroscopy. The crystalline fraction of the annealed spot increases dramatically from 0 to 0.93 with increasing incident laser power. We observe Raman lineshape narrowing and frequency hardening upon laser annealing due to the growth ...

Journal: :Applied Physics Letters 1979

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