The continuous scaling down of feature size in Silicon technology has resulted in several technological and fundamental hindrances. The researchers started to look for new nanoscale devices those can replace CMOS transistors in digital circuits. The nanowire transistor, FinFET, Carbon Nanotube field effect transistor (CNFET), tunnel field effect transistor (TFET), and single electron transistor...

This paper presents a new ?-Ga2O3 Junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (?DG-JL-FET) with an embedded P+ packet at the oxide layer (PO-?DG-JL-FET) for high-frequency applications. Our goal is to achieve efficient volume depletion region by placing of silicon. We show that proposed structure has subthreshold swing ? 64 mV/decade. It suppressed band-to-band tu...

Abstract The detection of biomolecules has been accomplished in this article by using the tunnel field effect transistor’s (TFET) bipolar nature. fabrication procedure made simpler, prices have gone down, and random dopant fluctuation (RDFs) eliminated charge plasma concept. objective work is to investigate performance a DopingLess- Dual Metal Gate- Cavity- HeteroJunction- Tunnel Field Effect T...

The single channel junction field-effect transistor (JFET) is probably the simplest transistor available. As shown in the schematics below (Figure 6.13 in your text) for the n-channel JFET (left) and the p-channel JFET (right), these devices are simply an area of doped silicon with two diffusions of the opposite doping. Please be aware that the schematics presented are for illustrative purposes...

Recent developments towards future polymer electronics are aimed at different applications as organic displays, complementary circuits, and all-polymer integrated circuits [1-3]. Basic devices are organic field-effect transistors (OFET, cross section in Figs.2 and 3) with an active layer made from an organic material. Until now the achieved performance of OFET's is not sufficient for envisaged ...

the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba couplin...

In this work, we present atomic scale simulation of junctionless semiconducting single–walled carbon nanotubes field effect transistors (CNT–FETs) and compare their performance to silicon nanowire (SiNW) transistors with similar dimensions. The energy dispersions relations for p–type SiNW and CNT are compared. The response of the transistors to source–drain bias and gate voltage is explored. Co...

The antioxidant effect of N, N-dimethylglycine (DMG) on in vitro-produced (IVP) bovine embryos was examined. After in vitro fertilization, presumptive zygotes were cultured with or without 0.1 μM DMG under different oxygen tensions. The percentage of embryos developing to the blastocyst stage was lowest under a 20% oxygen concentration without DMG, and it was significantly increased (P < 0.05) ...