نتایج جستجو برای: ion leakage

تعداد نتایج: 235469  

2014
MIKAEL ANDERSSON

Andersson, M. 2014. Characterisation of Chromatography Media Aimed for Purification of Biomolecules. Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 1202. 73 pp. Uppsala: Acta Universitatis Upsaliensis. ISBN 978-91-554-9102-4. Chromatography media (resins) are very important for and widely used by the biopharma industry in large scale producti...

Journal: :Plant & cell physiology 2005
Tracey Ann Cuin Sergey Shabala

It has been suggested that the role of compatible solutes in plant stress responses is not limited to conventional osmotic adjustment, but also includes some other regulatory or osmoprotective functions. In this study, we hypothesized that one such function is in maintaining cytosolic K+ homeostasis by preventing NaCl-induced K+ leakage from the cell, a feature that may confer salt tolerance in...

2013
Qurat-ul-Ann Mirza Yogesh Joglekar

Memristor (memory resistor) is a passive electrical circuit element whose instantaneous resistance depends not only on the voltage, but the history of the current applied to it. The first memristor was fabricated in 2008 by the HP labs in a semiconductor titanium-dioxide thin film. Apart from its potential for high-density memory storage, the electrical properties of a memristor share similarit...

2015
Mizuki Takemoto Hideaki E. Kato Michio Koyama Jumpei Ito Motoshi Kamiya Shigehiko Hayashi Andrés D. Maturana Karl Deisseroth Ryuichiro Ishitani Osamu Nureki Jorge Arreola

Channelrhodopsin (ChR) is a light-gated cation channel that responds to blue light. Since ChR can be readily expressed in specific neurons to precisely control their activities by light, it has become a powerful tool in neuroscience. Although the recently solved crystal structure of a chimeric ChR, C1C2, provided the structural basis for ChR, our understanding of the molecular mechanism of ChR ...

1999
Arkadiy Kats Gregory Ivensky Sam Ben-Yaakov

Abs t rac t -The phys ica l s ize of inductors in resonant converters was examined i n terms o f inductor t o transformer s i z e rat io . F o l l o w i n g the general d i scuss ion o f the i s s u e , the inductor s i z e i n ser i e s resonant DC-DC converter i s examined i n deta i l . It i s shown that the inductor t o transformer s i z e rat io i s a funct ion of the peak v o l t a g e o ...

Journal: :Nano letters 2007
Maria E Gracheva Julien Vidal Jean-Pierre Leburton

We show that a semiconductor membrane made of two thin layers of opposite (n- and p-) doping can perform electrically tunable ion current rectification and filtering in a nanopore. Our model is based on the solution of the 3D Poisson equation for the electrostatic potential in a double-cone nanopore combined with a transport model. It predicts that, for appropriate biasing of the membrane-elect...

2008
Maria E. Gracheva Jean-Pierre Leburton

We show that a semiconductor membrane made of two thin layers of opposite (nand p-) doping can perform electrically tunable ion current rectification and filtering in a nanopore. Our model is based on the solution of the 3D Poisson equation for the electrostatic potential in a double-cone nanopore, combined with a transport model. It predicts that for appropriate biasing of the membraneelectrol...

2013
Sweta Chander Pragati Singh

This paper presents the impact of parameter optimization of n-type MOSFET for direct tunneling gate current using ultrathin Si3N4 and HfO2 with EOT (Equivalent Oxide Thickness) of 1.0 nm. This work is compared with TCAD santaurus simulation results to verify that accuracy of the model and excellent reduction in gate leakage with the introduction of the high-k gate dielectrics (HfO2 & Si3N4) in ...

Journal: :Chemosphere 2021

This study investigated the effects of accidental contamination soils with phenol, toluene, nitric acid, and hydrogen fluoride (HF) by simulating chemical leakage in soil with/without rain characterizing resulting metabolites microbial. In case acid leakage, pH cation exchange capacity were decreased, content ion was increased HF leakage. Using mass spectrometry-based metabolomics analysis, phy...

Journal: :Electronics 2023

Impacts of source/drain (S/D) recess engineering on the device performance both gate-all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been comprehensively studied at 5 nm node technology. TCAD simulation results show that off-leakage, including subthreshold leakage through channel (Isub) punch-through (IPT) in sub-channel, is strongly related to S/D process. Firstly...

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