We present a Monte-Carlo ion implantation simulation method that allows a very accurate prediction of implantation induced point defects, generation of amorphous areas, and impurity distributions. The implanted impurity pro les can be calculated as well as the distributions of impurities that are moved from one material to another during the implantation process. The simulation method can be ap...

To analyze mutation in tomato genomic DNA by RAPD technology, certain factors influencing RAPD amplification, such as, DNA template, Taq DNA polymerase, Mg, dNTPs and primer, were studied to optimize RAPD amplification reaction system. RAPD amplification of tomato genomic DNA after low energy ion implantation along with soybean DNA was successfully performed. Compared to the control, genomic DN...

We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electric...

ITEP in collaboration with MEPHI and HCEI (Tomsk) develops the high intensity ion beam generation and transport systems for low energy (1 – 50 keV) ion implantation. Such facilities are used for semiconductor technology. The Bernas type ion source is used for the ribbon ion beam production. The periodical system of electrostatic lenses (electrostatic undulator) was proposed for ribbon beam tran...

2014 A very simplified description of angular distribution hyperfine interaction techniques is given, with a view to presenting their applications in ion-implantation studies of metals. Some typical experiments are reviewed. The latter part of the paper is devoted to a discussion of radiation damage effects in hyperfine interaction studies after ion-implantation. REVUE DE PHYSIQUE APPLIQUÉE TOM...