Due to its direct band gap of ~1.35 eV, appropriate energy band-edge positions, and low surface-recombination velocity, p-type InP has attracted considerable attention as a promising photocathode material for solar hydrogen generation. However, challenges remain with p-type InP for achieving high and stable photoelectrochemical (PEC) performances. Here, we demonstrate that surface modifications...

Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical were used to determine the electron energy band offsets between different constituent materials. It has been shown that when photon is sufficient enough excite electrons in narrower bandgap layer with an greater than conduction offset, terahertz pulse changes its polarity. Theoretical analysi...

Abstmct-Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AIAs, InAs, Gap) and some of their alloys (AI,Ga, -xAs, In,Ga, ,As, Ga,In, r P ) , and hole transport in Si have been performed at two lattice temperatures (77 and 300 K) . The model employs band structures obtained from local empirical pseudopotential calcu...

BACKGROUND Intermittent negative pressure (INP) applied to the lower leg and foot increases foot perfusion in healthy volunteers. The aim of the present study was to describe the effects of INP to the lower leg and foot on foot macro- and microcirculation in patients with lower extremity peripheral arterial disease (PAD). METHODS In this experimental study, we analyzed foot circulation during...

Thick ZnTe grown on III–V substrates is proposed as a low-cost virtual substrate for electronic and optoelectronic device applications based on 6.1 Å compound semiconductors. This paper reports the growth of ZnTe samples on GaAs, InP, InAs and GaSb (0 0 1) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characteri...

Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality micrometer-thin films are obtained. Protocols for the single-crystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semicond...

A method for growth of ultralarge grain (>100 μm) semiconductor thin-films on nonepitaxial substrates was developed via the thin-film vapor−liquid−solid growth mode. The resulting polycrystalline films exhibit similar optoelectronic quality as their single-crystal counterparts. Here, deterministic control of nucleation sites is presented by substrate engineering, enabling user-tuned internuclei...

Precise control of the doping in the p-type semiconductor layers is important for fabrication of integrated optoelectronic structures. Zinc is a common p-type dopant used in InP-InGaAsP and InP-InGaAlAs systems grown by MOVPE. For example, Zn-doped InP with the carrier concentration more than 18 3 10 cm is widely used as ptype cladding layer on top of the adjacent undoped active region of the v...

The existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low ...