We describe an electrochemical oxidative desorption of benzenediazonium-grafted organic layers and immobilized proteins on the layers from indium-tin-oxide electrode surfaces.

Optical modeling was applied for obtaining absorbance spectra and band gap values for different morphology of ZnO semiconductor. In optical modeling, the relative permittivity scalars of zinc oxide coral like nanorods were calculated using the Bruggeman homogenization formalism. ZnO nano rods (ZONRs) as a nucleus layer were fabricated on the Indium Tin Oxide (ITO) by chronoamperometry (CA) in a...

oxide films Chang-Yup Park, Soon-Gil Yoon, Young-Hun Jo, and Sung-Chul Shin Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea School of Nano Science and Technology, Chungnam National University, Daejeon 305-764, Republic of Korea Nano Materials Research Team, Korea Basic Science Instit...

Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one g...

OBJECTIVES The aim of this study was to clarify the chronic toxicological effects of indium-tin oxide (ITO) and indium oxide (In(2)O(3)) on laboratory animals. METHODS Male Syrian golden hamsters were intratracheally administered 3 mg/kg or 6 mg/kg of ITO particles, or 2.7 mg/kg or 5.4 mg/kg of In(2)O(3) particles, containing 2.2 mg/kg or 4.5 mg/kg of indium, twice a week, for 8 wk. Control h...

In2O3 exhibits a dramatic increase in solubility of SnO2 and ZnO when they are cosubstituted into In2O3. The resultant material, In2-2xSnxZnxO3-δ with x ) 0-0.4, displays the same order of magnitude conductivity and transparency compared with bulk ITO (tindoped indium oxide). Rapid quenching of In2-2xSnxZnxO3-δ raises the conductivity and widens the optical bandgap while lowering the optical tr...

In(2)O(3) nanowire transistors are fabricated with and without oxygen plasma exposure of various regions of the nanowire. In two-terminal devices, exposure of the channel region results in an increased conductance of the channel region. For In(2)O(3) nanowire transistors in which the source/drain regions are exposed to oxygen plasma, the mobility, on-off current ratio and subthreshold slope, ar...