نتایج جستجو برای: indium metallurgy

تعداد نتایج: 11424  

Journal: :Resources 2021

The demand for metals from the entire periodic table is currently increasing due to ongoing digitalization. However, their use within electrical and electronic equipment (EEE) poses problems as they cannot be recovered sufficiently in end-of-life (EoL) phase. In this paper, we address unleashed dissipation of caused by design EEE which no globally established recycling technology exists. We des...

2014
Rajesh Biswal Arturo Maldonado Jaime Vega-Pérez Dwight Roberto Acosta María De La Luz Olvera

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10-3 Ω·cm and high optical transmittance, in the visible range, of 50%-70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growt...

Journal: :Nanotechnology 2017
Heidi Potts Nicholas P Morgan Gözde Tütüncüoglu Martin Friedl Anna Fontcuberta I Morral

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets are formed in situ on InAs(Sb) stems. Their position is modified to promote growth in the 〈11-2〉 or equivalent directions. We also show that...

2011
Qingduan Meng Junxian Li Yanqiu Lv Weiguo Sun

Based on viscoplastic Anand’s model, the structural stress of 8 8 InSb infrared focal plane array detector with underfill is systematically analyzed by finite element method, and the impacts of design parameters including indium bump diameters, heights on both Von Mises stress and its distribution are discussed in this manuscript. Simulation results show that for the given indium bump height, t...

2014
Cheol Hong Lim Jeong-Hee Han Hae-Won Cho Mingu Kang

OBJECTIVES The use of indium compounds, especially those of small size, for the production of semiconductors, liquid-crystal panels, etc., has increased recently. However, the role of particle size or the chemical composition of indium compounds in their toxicity and distribution in the body has not been sufficiently investigated. Therefore, the aim of this study was to examine the effects of p...

Journal: :international journal of bio-inorganic hybrid nanomaterials 0

in this paper, indium tin oxide (ito) nanoparticles has been prepared by chemical methods under given conditions with solution of indium chloride (incl3·4h2o), tin chloride (sncl4·5h2o) in ammonia solution. the samples were characterized by x-ray diffraction (xrd) and scanning electron microscopy (sem) analyses after heat treatments. the sem results showed that, the size of the ito particles pr...

Journal: :Chemical communications 2011
Ilja Peckermann Gerhard Raabe Thomas P Spaniol Jun Okuda

Allyl and 2-methylallyl indium compounds were prepared by salt metathesis starting from indium trichloride and a Grignard reagent. They are highly fluxional in solution and reveal coordination numbers of the indium atoms of four and five in the solid state.

Journal: :Physical chemistry chemical physics : PCCP 2015
Anu George Harish K Choudhary Biswarup Satpati Sukhendu Mandal

Unlike silver and gold, indium has material properties that enable strong resonances extended up to the ultraviolet. This extended response, combined with low cost, and ease of synthesis process, makes indium a highly promising material for applications. In this work, we have synthesized ligand-protected indium nanoparticles by a metal reduction method. Powder X-ray diffraction and EDX analyses...

2015
Jun Tae Jang Jozeph Park Byung Du Ahn Dong Myong Kim Sung-Jin Choi Hyun-Suk Kim Dae Hwan Kim

Articles you may be interested in Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors Appl. Temperature dependence of negative bias under illumination stress and recovery in amorphous indium galli...

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