نتایج جستجو برای: in 111 chloride

تعداد نتایج: 16997064  

Journal: :Nanoscale 2014
Kim S Wimbush Raluca M Fratila Dandan Wang Dongchen Qi Cao Liang Li Yuan Nikolai Yakovlev Kian Ping Loh David N Reinhoudt Aldrik H Velders Christian A Nijhuis

This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electric...

Journal: :Optics express 2014
Feng Xia Xinzheng Zhang Meng Wang Sanming Yi Qian Liu Jingjun Xu

Metal-transparent-metallic-oxide (MTMO) grayscale photomasks fabricated by direct laser writing have been proposed in recent years. The fabrication mechanism is attributed to light-induced melt-oxidization. The temporal-spatial distribution of temperature fields of indium film-glass samples under a laser pulse have been calculated by the Finite-Difference Time-Domain method. The laser action ar...

Journal: :Chemical communications 2009
Agostino Pietrangelo Marc A Hillmyer William B Tolman

Indium trichloride, benzyl alcohol, and triethylamine (without an added 'directing' multidentate ligand) generate a catalyst in situ for the room temperature polymerization of D,L-lactide affording highly heterotactic polylactide of controlled molecular weight and narrow molecular weight distribution.

Journal: :Optics express 2017
Shamsul Arafin Arda Simsek Seong-Kyun Kim Sarvagya Dwivedi Wei Liang Danny Eliyahu Jonathan Klamkin Andrey Matsko Leif Johansson Lute Maleki Mark Rodwell Larry Coldren

An integrated heterodyne optical phase-locked loop was designed and demonstrated with an indium phosphide based photonic integrated circuit and commercial off-the-shelf electronic components. As an input reference, a stable microresonator-based optical frequency comb with a 50-dB span of 25 nm (~3 THz) around 1550 nm, having a spacing of ~26 GHz, was used. A widely-tunable on-chip sampled-grati...

2005
Christopher S. Garcia Tamer F. Refaat Glenn R. Farnsworth M. N. Abedin Hani E. Elsayed-Ali

An Indium Gallium Arsenide linear photodiode array in the 1.1-2.5 μm spectral range was characterized. The array has 1024X1 pixels with a 25 μm pitch and was manufactured by Sensors Unlimited, Inc. Characterization and analysis of the electrical and optical properties of a camera system were carried out at room temperature to obtain detector performance parameters. The signal and noise were mea...

Journal: :Chemical communications 2008
Yoshihiro Nishimoto Masayuki Kajioka Takahiro Saito Makoto Yasuda Akio Baba

Indium halides or bismuth halides catalyzed the coupling of various alcohols with alkenylsilanes to give the corresponding alkenes stereospecifically without any other activators.

Journal: :Journal of the American Chemical Society 2012
Daniel K Harris Moungi G Bawendi

The synthesis of III-V quantum dots has been long known to be more challenging than the synthesis of other types of inorganic quantum dots. This is attributed to highly reactive group-V precursors. We synthesized molecules that are suitable for use as group-V precursors and characterized their reactivity using multiple complementary techniques. We show that the size distribution of indium arsen...

2014
Bin Yu Sanghyun Ju Xuhui Sun Garrick Ng Thuc D. Nguyen David B. Janes Thuc Dinh Nguyen M. Meyyappan

2005
N. Vaidya H. Huang

In this paper, we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski technique. Our model is similar to the ones used for silicon crystal, which includes the Fickian diffusion and a recombination mechanism. This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals. The temperature solution an...

2016
G. W. Mudd M. R. Molas X. Chen V. Zólyomi K. Nogajewski Z. R. Kudrynskyi Z. D. Kovalyuk G. Yusa O. Makarovsky L. Eaves M. Potemski V. I. Fal’ko A. Patanè

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semicond...

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