نتایج جستجو برای: implantation atoms

تعداد نتایج: 119500  

2000
J. Chen P. Jung H. Trinkaus

Helium has a decisive effect on the microstructure of silicon carbide materials after implantation and subsequent annealing. A dense population of bubbles and dislocation loops is already observed at relatively low displacement doses after annealing of helium-implanted a-SiC, while no visible damage appears after irradiation without helium implantation under otherwise equal conditions. The defe...

Journal: : 2023

Using the methods of Auger electron and photoelectron spectroscopy light absorption spectroscopy, composition, densities state electrons in valence band, parameters energy bands Ge (111) implanted with Na+ ions an E0 = 0.5 keV at a dose D Dsat 6·1016 cm-2 thin layer NaGe2 obtained by heating ion-implanted Ge. It is shown that narrow n-type band (~0.2 eV) appears spectrum after ion implantation ...

2001
T. Schenkel J. Meijer A. Persaud E. O. Lawrence J. W. McDonald J. P. Holder D. H. Schneider Lawrence Livermore

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), s...

Journal: :Philosophical transactions. Series A, Mathematical, physical, and engineering sciences 2003
R G Clark R Brenner T M Buehler V Chan N J Curson A S Dzurak E Gauja H S Goan A D Greentree T Hallam A R Hamilton L C L Hollenberg D N Jamieson J C McCallum G J Milburn J L O'Brien L Oberbeck C I Pakes S D Prawer D J Reilly F J Ruess S R Schofield M Y Simmons F E Stanley R P Starrett C Wellard C Yang

We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-sca...

Journal: :Nature materials 2002
U Kaiser D A Muller J L Grazul A Chuvilin M Kawasaki

Ion implantation is widely used to introduce electrically or optically active dopant atoms into semiconductor devices. At high concentrations, the dopants can cluster and ultimately form deactivating precipitates, but deliberate nanocrystal formation offers an approach to self-assembled device fabrication. However, there is very little understanding of the early stages of how these precipitates...

Journal: : 2022

The review examines experimental and theoretical works devoted to the description of modern methods for preparation iron endometal-fullerenes(EMF), as well that dispute such results due extremely low efficiency used methods. paper also considers advantages disadvantages synthesis, areas possible application synthesis products. It is shown EMF obtained mainly by two - arc discharge (plasma) usin...

Journal: :journal of dental research, dental clinics, dental prospects 0
abiodun arigbede department of restorative dentistry, faculty of dentistry, university of port harcourt, port harcourt, nigeria bukola folasade adeyemi department of oral pathology, faculty of dentistry college of medicine, university of ibadan ibadan, oyo state. omowumi femi-akinlosotu department of anatomy, faculty of basic medical sciences college of medicine, university of ibadan ibadan, oyo state, nigeria

background and aim: in vitro studies have revealed a direct association between resin content and cytotoxicity of resin composites; but implantation studies in this regard are sparse. this study investigates the relationship between filler content of composite resins and biocompatibility. materials and methods: this study was conducted using 18 male wistar rats (180-200g), 1 nano-hybrid (prime-...

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