Undoped AlN/GaN heterostructures, grown on sapphire by molecular beam epitaxy, exhibit very low sheet resistances, ~ 150 Ohm/sq, resulting from the 2-dimensional electron gas situated underneath a 4 nm thin AlN barrier. This extraordinarily low sheet resistance is a result of high carrier mobility and concentration (~ 1200 cm/Vs and ~ 3.5x10 cm at room temperature), which is ~ 3 x smaller than ...

A resonance detection scheme and some useful ideas for cavity-based searches of light cold dark matter particles (such as axions) are presented, as an effort to aid in the on-going endeavors in this direction as well as for future experiments, especially in possibly developing a table-top experiment. The scheme is based on our idea of a resonant detector, incorporating an integrated Tunnel Diod...

As a consequence of favorable macroscopic material properties such as thermal conductivity, piezoelectricity, breakdown field, and electron mobility, wurtzite III-nitride materials are currently being pursued for a plethora of diverse applications, including RF power amplification 1 ' 2 , power switching 3 , surface acoustic wave chemical and biological sensors 4 , solar-blind photodetectors s ...

We have performed an analysis of the influence of the probe tip geometry in scanning capacitance microscopy and spectroscopy measurements on an AlxGa12xN/GaN heterostructure field-effect transistor ~HFET! structure. The extremely small probe tip size ~typical apex radius ;10–30 nm! makes a detailed analysis essential in comparisons of dC/dV spectra with standard, large-area C/V measurements. Us...

This work reports record-high three-terminal on-state drain-source breakdown voltage (BVDS) of -735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide surface passivation by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Good source/d...

We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with μn > 10,000 cm/V-s exhibit vx0 in excess of 3 × 10 cm/s even at VDD = 0.5 V. This is over 2 times that of state-of-the-art Si devices at VDD > 1. We have ve...

A new technique for determining the parasitic source resistance in Heterostructure Field-Effect Transistors (HFET’s) is preManuscript received March 8, 1990; revised April 20, 1990. This work has been partially sponsored by an EECS Special Projects Fund from the MIT and by a TRW Scholarship from the MIT Undergraduate Research Opportunities Program. The review of this brief was arranged by Assoc...

Proteins on biomicroelectromechanical systems (BioMEMS) confer specific molecular functionalities. In planar FET sensors (field-effect transistors, a class of devices whose protein-sensing capabilities we demonstrated in physiological buffers), interfacial proteins are analyte receptors, determining sensor molecular recognition specificity. Receptors are bound to the FET through a polymeric int...