We investigate the performances of 18 nm gate length AlInN/GaN, InP/InGaAs heterostructure and a Silicon double gate MOSFET, using 2D Sentaurus TCAD simulation. The heterostructure device uses lattice-matched wideband Al0.83In0.17N /InP and narrowband GaN / In0.53Ga0.47As layers, along with high-k Al2O3 as the gate dielectric, while silicon based device uses SiO2 gate dielectric. The device has...

The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phospho...

Two dimensional van der Waals heterostructures have shown promise in electronic device applications because of their high charge carrier mobility, large surface area and large spin conductance value. However, it still remains a great challenge to design heterolayers with an electric field driven tunable electronic bandgap and stable geometry to obtain high electron mobility. Motivated by the in...

With advent of the ubiquitous network era and due to recent progress of III-V nanotechnology, the present III-V heterostructure microelectronics will turn into what one might call III-V heterostructure nanoelectronics, and may open up a new future in much wider application areas than today, combining information technology, nanotechnology and biotechnology. Instead of the traditional top-down a...

The emergence of two-dimensional metallic states at the LaAlO3/SrTiO3 (LAO/STO) heterostructure interface is known to occur at a critical thickness of four LAO layers. This insulator to-metal transition can be explained through the "polar catastrophe" mechanism arising from the divergence of the electrostatic potential at the LAO surface. Here, we demonstrate that nanostructuring can be effecti...

Well-crystallized Sn2S3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn2S3 thin films exhibited a sheet-like feature. The Sn2S3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing...

It is well known that the excess noise factor of an avalanche photodiode (APD), which is a measure of its gain fluctuation, can be reduced by decreasing the thickness of the avalanche multiplication region. This noise reduction is attributable to the increased importance of the dead-space effect in thin layers, which prevents a carrier from impact ionizing before it travels a sufficient distanc...

Photonic crystal ring resonators (PCRRs) are traditional structures fordesigning optical channel drop filters. In this paper, Photonic crystal channel drop filter(CDFs) with a new configuration of ring resonator is presented. The structure is made ofa square lattice of silicon rods with the refractive index nsi=3. 4 which are perforated inair with refractive index nair=1. Calculations of band s...

We introduce the concept of a hybrid 2D-3D photonic band gap (PBG) heterostructure which enables both complete control of spontaneous emission of light from atoms and planar light-wave propagation in engineered wavelength-scale microcircuits. Using three-dimensional (3D) light localization, this heterostructure enables flow of light without diffraction through micron-scale air waveguide network...