Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 , ’s from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Convent...

We have demonstrated a P-n-P Ga&JInGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (Vo~) that is 0.27 V lower than in a comparable P-n-p AIGaAs/GaAs HBT. The device shows nearide.al DC characteristics with a curfent gain (~) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AIGaAs/GaAs HBT, with ~~ and ~M...

Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance,...

A 16-element heterojunction-bipolar-transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. Here we report a model of gain analysis for the grid and give a comparison of the measurement and theory. Measured patterns gives evidence of a common-mode oscillation. A stability model for the common-mode oscillation is developed. Based...

The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a conjugated wire. The calculated results show the enhancement or depletion mode of a transistor by applying a gate field a...

Two-tone intermodulation in ultrahigh vacuum/chemical vapor deposition SiGe heterojunction bipolar transistors (HBTs) were analyzed using a Volterra-series-based approach that completely distinguishes individual nonlinearities. Avalanche multiplication and collector–base (CB) capacitance were shown to be the dominant nonlinearities in a single-stage common-emitter amplifier. At a given , an opt...

The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor, is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a pi-conjugated wire. The calculated results show the enhancement or depletion mode of a transistor on applying a gate fiel...

Since its first technology qualification in 1996 in IBM’s Advanced Semiconductor Technology Center (ASTC), Hopewell Junction, NY, silicon germanium (SiGe) has become the darling of the chip world, with new product and development agreement announcements made on nearly a daily basis. In this paper, we update progress made in SiGe since our 1Q97 IBM MicroNews article [1], tracing a number of busi...

The recent introduction of silicon-germanium (SiGe) alloys has proven exceptionally promising for achieving excellent bipolar transistor performance at cryogenic temperatures, while maintaining the cost and yield advantages traditionally associated with silicon (Si) manufacturing. In this paper we review the features of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) which make...