We present an approach to simulate ion’s drift and diffusion in chemical sensors based on ion-selective-membranes (ISMs) either ion-selective electrode structures or coupled field-effect transistors. The model is used analyze the sensitivity, selectivity, transient response of ISMs non-equilibrium conditions upon real-time concentration changes. Our simple implementation combines advanced featu...

A multigrid preconditioned conjugate gradient algorithm is introduced into a semiconductor device modeling code DANCIR This code simulates a wide variety of semiconductor devices by numerically solving the drift di usion equations The most time consuming aspect of the simulation is the solution of three linear systems within each iteration of the Gummel method The original version of DANCIR use...

A new paradigm for solving plasma fluid modeling equations is proposed and verified in this paper. Model equations include continuity equations for charged species with drift-diffusion approximation, electron energy equation, and Poisson’s equation. Resulting discretized equations are solved jointly by the Newton–Krylov–Schwarz (NKS) [1] scheme by means of a parallelized toolkit called PETSc. A...

For a Voronoï finite volume discretization of the van Roosbroeck system with general charge carrier statistics we compare three thermodynamically consistent numerical fluxes known in the literature. We discuss an extension of the Scharfetter-Gummel scheme to non-Boltzmann (e.g. Fermi-Dirac) statistics. It is based on the analytical solution of a two-point boundary value problem obtained by proj...

Our device simulator MINIMOS has been used for the numerical analysis -of three-dimensional non-planar silicon MOSFET and GaAs MESFET structures. Here we present an extension of the program for the simulation of transient effects. This version of MINIMOS has further been enhanced by a new, highly accurate current integration method. The computational complexity of three-dimensional transient si...

In this article we concisely present severalmodern strategiesthat are applicable to drift-dominated carriertransport in higher-orderdeterministicmodels such as the driftdiffusion,hydrodynamic, and quantumhydrodynamic systems. The approachesinclude extensions of “upwind” and artificialdksipation schemes, generalizationof the tradltional Scharfetter-Gummel approach, Petrov-Galerkin and streamline...

When comparing measurements to numerical simulations of moisture transfer through porous materials a rush of the experimental moisture front is commonly observed in several works shown in the literature, with transient models that consider only the diffusion process. Thus, to overcome the discrepancies between the experimental and the numerical models, this paper proposes to include the moistur...

We present a hierarchical approach to the “atomistic” simulation of aggressively scaled sub-0.1m MOSFET’s. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional driftdiffusion atomistic simulation approach is first described and used to verify more economical, but restri...

In this paper we present a novel exponentially fitted finite element method with triangular éléments for the decoupled continuity équations in the drift-diffusion model of semiconductor devices. The continuous problem is first formulated as a variational problem using a weighted inner product. A Bubnov-Galerkin finite element method with a set of piecewise exponential basis functions is then pr...

The effects of finite particle size on electrostatics, density profiles, and diffusion have been a long existing topic in the study of ionic solution. The previous size-modified Poisson-Boltzmann and Poisson-Nernst-Planck models are revisited in this article. In contrast to many previous works that can only treat particle species with a single uniform size or two sizes, we generalize the Borukh...