The cover shows the extrinsic photoconduction induced Ge-based polarization-sensitive photodetector. structure of photodetector is shown in upper left corner. amplified crystal GeSe with several Ge vacancies middle. Additionally, image excess carriers being excited by a polarized light lower right In article number 2006765, Qing Li, Zhongming Wei, Weida Hu, and co-workers investigate effect 2D ...

In this paper, we review a host of methods used to model amorphous materials. We particularly describe methods which impose constraints on the models to ensure that the final model meets a priori requirements (on structure, topology, chemical order, etc). In particular, we review work based on quench from the melt simulations, the 'decorate and relax' method, which is shown to be a reliable sch...

Orbital angular momentum (OAM) state of photons offer an attractive additional degree of freedom that has found a variety of applications. Measurement of OAM state, which is a critical task of these applications, demands photonic integrated devices for improved fidelity, miniaturization, and reconfiguration. Here we report the design of a silicon-integrated OAM receiver that is capable of detec...

Introduction IV-VI compounds are regarded as average group V material. In crystalline group V elements and IV-VI compounds, the Peierls distortion occurs. Strong bonds with short bond length and relatively weak bonds with long bond length coexist in the crystal. Therefore anisotropic contraction of the local structure is expected under pressure [1]. In crystalline SnSe, atoms form two dimension...