We report infrared photocurrent ~PC! and photoluminescence ~PL! spectroscopy of self-assembled Ge dots grown on Si~100! by molecular beam epitaxy. PL spectra show a transition from twoto three-dimensional growth as the Ge thickness exceeds 7 Å. The sum of the PC peak energy and PL energy from Ge dots is found to be approximately equal to the energy band gap of Si. Boron doping changes the energ...

Silver photodiffusion in thin Ge30Se70 films is investigated in order to understand the structure forming in the Ge–Se host after introduction of Ag in it. Optical micrographs point towards formation of homogeneous films after deposition of the Ge–Se material on glass substrate. This structure changes and occurrence of heterogeneous regions is imaged after Ag is introduced into the Ge–Se host. ...

Appropriately controlling the properties of the Si shell in Ge/Si core/shell nanowires permits not only passivation of the Ge surface states, but also introduces new interface phenomena, thereby enabling novel nanoelectronics concepts. Here, we report a rational synthesis of Ge/Si core/shell nanowires with doped Si shells. We demonstrate that the morphology and thickness of Si shells can be con...

Silver photodiffusion in thin Ge30Se70 films is investigated in order to understand the structure forming in the Ge-Se host after introduction of Ag in it. Optical micrographs point towards formation of homogeneous films after deposition of the Ge-Se material on glass substrate. This structure changes and occurrence of heterogeneous regions is imaged after Ag is introduced into the Ge-Se host. ...

we investigate the temperature-dependences of the Brillouin frequency shift in three different kind of single-mode fibers using a heterodyne method for sensing temperature. Positive dependences coefficients of 0.77, 0.56 and 1.45MHz/0C are demonstrated for 25 km long single-mode fiber, 10 km long non-zero dispersion shifted fiber and 100 m photonic crystal fiber, respectively. The results indic...