Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very imp...

in this paper a novel all-optical logic nand, nor and xor gate based on nonlinear directional coupler theory is demonstrated. we use the identical structure which contains three waveguides, for designing these gates; the only difference however, is the power of inputs light beam. in other words, while a beam with 4 w/μm in power considered as logical one, the output is nand gate and if a beam w...

This study introduces a reversible optical fulladder. Also optical NOT and NOR gates are implemented through Electro-Absorption-Modulator / Photo Detector (EAM/PD) pairs, were utilized for fulfilling reversible R gate. Then, reversible fulladder was designed based on the proposed reversible optical R gate. The operation of the suggested fulladder was simulated using Optispice and it was fou...

One of the major yield killers of power-amplifier PHEMTbased MMICs is fabricating a T-shaped gate with gate periphery of several tens of mm. We have investigated a novel PMMA/PMGI/PMMA tri-layer resist scheme for T-Gate definition of PHEMTs with 0.25-μm gate length and in-situ Ar ion beam treatment before gate evaporation as methods for eliminating this problem. We intend to extend this technol...

We demonstrated gate voltage control of spin precession in InGaAs mesoscopic ring arrays based on Rashba spin orbit interaction (SOI). We employed 100 nm ALD Al2O3 and 150 nm sputtered SiO2 gate insulators combined with large and small ring arrays to compare the gate sensitivity for the spin precession. Al’tshuler-Aronov-Spivak (AAS) oscillations were clearly observed and the oscillation phases...

A proof-of-concept metal–insulator–semiconductor (MIS) AlGaN/GaN high-electron mobility transistor (HEMT) that uses a self-aligned 10 nm AlOx gate insulator and SiNx passivation in the device access regions was investigated. Self-alignment of the gate insulator to metal was achieved by utilizing a submicron tri-layer photoresist pattern to lift-off sequentially-deposited AlOx dielectric and Ni/...

In the aggressive scaling of the gate dielectric thickness for continuous shrinkage of MOSFETs, a increase in the gate resistance emerges as one of major concerns from the viewpoint of eliminations in both the voltage drop through the gate under higher gate leakage current [1] and the gate depletion effect [2]. Especially, in case of poly-Si gate, with decreasing gate size, the gate depletion e...

Quantum-dot cellular automaton (QCA) is a novel nanotechnology with a very different computational method in compared with CMOS, whereas placement of electrons in cells indicates digital information. This nanotechnology with specifications such as fast speed, high parallel processing, small area, low power consumption and higher switching frequency becomes a promising candidate for CMOS tec...

In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material ...