نتایج جستجو برای: gas cvd

تعداد نتایج: 261518  

M. Farangi M. H. Pakzamir M. Zahedifar,

Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...

H. Haratizadeh M. B. Rahmani M. Barzegar,

Thin films of SnO2 nanowires were successfully prepared by using chemical vapor deposition (CVD) process on quartz substrates. Afterwards, a thin  layer of palladium (Pd) as a catalyst was coated on top of nanowires. For the deposition of Pd, a simple and low cost technique of spray pyrolysis was employed, which caused an intensive enhancement on the sensing response of fabricated sensors...

1995
Guan-Ren Lai E. N. Farabaugh A. Feldman L. H. Robins

A closed system hot filament chemical vapor deposition (CVD) reactor has been used to deposit diamond films on silicon substrates. A fixed charge of hydrogen gas is fed into the deposition system until the desired deposition pressure level is reached. A solid graphite cylindrical rod held above the tungsten filament was the carbon source. System parameters for diamond film growth have been dete...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2009
J E Butler Y A Mankelevich A Cheesman Jie Ma M N R Ashfold

In this paper we review and provide an overview to the understanding of the chemical vapor deposition (CVD) of diamond materials with a particular focus on the commonly used microwave plasma-activated chemical vapor deposition (MPCVD). The major topics covered are experimental measurements in situ to diamond CVD reactors, and MPCVD in particular, coupled with models of the gas phase chemical an...

2008
Zohreh GHORANNEVIS Toshiaki KATO Toshiro KANEKO Rikizo HATAKEYAMA

We carried out the carbon nanotubes (CNTs) growth from an Au catalyst with two different kinds of chemical vapor deposition (CVD) methods. In case of thermal CVD (TCVD), high quality single-walled carbon nanotubes (SWNTs) can be grown. On the other hand, only poorly crystallized CNTs are synthesized with plasma CVD (PCVD). Through the parametric investigations, it is found that the hydrogen gas...

2018
WERNER

A review is given on actual numerical models for CVD equipment and processes. While the basic work concerning the differential equations and the boundary conditions has been established already a decade or more ago, the more recent availability of increased computing power has enabled simulation to become a predictive tool in equipment and process design. The present task in CVD simulation incl...

Journal: :The journal of physical chemistry letters 2017
Masaaki Misawa Subodh Tiwari Sungwook Hong Aravind Krishnamoorthy Fuyuki Shimojo Rajiv K Kalia Aiichiro Nakano Priya Vashishta

Two-dimensional and layered MoS2 is a promising candidate for next-generation electric devices due to its unique electronic, optical, and chemical properties. Chemical vapor deposition (CVD) is the most effective way to synthesize MoS2 monolayer on a target substrate. During CVD synthesis, sulfidation of MoO3 surface is a critical reaction step, which converts MoO3 to MoS2. However, initial rea...

2016
Jiawen Ren Stuart Licht

Primary evidence of the direct uptake of atmospheric CO2 and direct transformation into carbon nanotubes, CNTs, is demonstrated through isotopic labeling, and provides a new high yield route to mitigate this greenhouse gas. CO2 is converted directly to CNTs and does not require pre-concentration of the airbone CO2. This C2CNT (CO2 to carbon nanotube) synthesis transforms CO2-gas dissolved in a ...

2017
Tesfalem G. Welearegay Raul Calavia Radu Ionescu Eduard Llobet

This paper present a new design and configuration of metal oxide gas sensor based on back-gated device that can operate at low temperature. Gold electrodes patterned onto an oxidized, heavily doped, p-type silicon substrate were designed and fabricated at a wafer level. The Au— electrodes were used as source—drain metal contacts and a third gate electrode was connected from the backside of the ...

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