The properties of carbon layers (C-layers) formed by thermal decomposition CCl 4 at temperatures 600-700 o C on the surface gallium arsenide structures fabricated MOC-hydride epitaxy n + -GaAs (100) wafers have been studied. morphology was studied using atomic force microscopy. structural and optical were Raman spectroscopy reflection spectroscopy. It has found that in case a C-layer temperatur...

Solid-state power amplifiers at W-band (75 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications there is a growing interest for these devices in for example millimetre wave imaging, communication ...

The healing of venous ulcers of the leg with and without gallium arsenide laser treatment was studied in 42 patients randomly divided into two groups. One group received standard conservative treatment and gallium arsenide laser, and the other received the same standard treatment and placebo laser treatment. There were no differences in results between the two groups.

In our earlier work we introduce a numerical analysis to investigate the excess noise and performance factor of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process. In this paper we investigate the gain, breakdown voltage and carrier injection breakdown probability of homojunction avalanche photodiode in the wide rang...

This paper presents a survey of low-power digital Gallium Arsenide logic applicable to high performance VLSI circuits and systems and proposes new design concepts in methodology and architecture based on implementation of Pseudo-Dynamic Latched Logic in order to achieve reasonable power-delay-area tradeoff The approach is highly suitable for self-timed systems where the complexities of clock sk...

In this paper, the architecture and the implementation of a complex fast Fourier transform (CFFT) processor using 0.6 m gallium arsenide (GaAs) technology are presented. This processor computes a 1024-point FFT of 16 bit complex data in less than 8 s, working at a frequency beyond 700 MHz, with a power consumption of 12.5 W. The architecture of the processor is based on the COordinate Rotation ...

Gallium arsenide (GaAs), a technologically and economically important semiconductor, is widely utilized in both military and commercial applications. This chemical is a potential health hazard as a carcinogen and immunotoxicant. We previously reported that macrophages at the exposure site exhibit characteristics of activation. In vitro culture of macrophages with GaAs fails to recapitulate the ...

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