The effects of Zn doping in the substrate on the thermal stability of GaAsyAl Ga As single quantum well are investigated 0.24 0.76 by 900 8C rapid thermal annealing and low-temperature (12 K) photoluminescence measurements. An improvement in thermal stability is demonstrated for structures grown on Zn-doped GaAs in comparison with those grown on semi-insulating and Sidoped GaAs substrates. It i...

We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al0.3Ga0.7As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al0.3Ga0.7As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barri...

A light-emitting diode array was fabricated using a lateral p–n junction to inject carriers in the InGaAs active layer. The lateral p–n junction is formed in GaAs epilayers doped only with silicon and grown by molecular beam epitaxy on a patterned GaAs (311)A-oriented substrate. This design allows the use of electrically insulating carrier-confining barriers and coplanar contacts while simplify...

The effect of doping and temperature on the gain characteristics of GaInNAs/GaAs quantum well lasers emitting at 1.3 μm are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in the transparency carrier density by p-type d...

Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and pro...

245 Abstract—We present two-dimensional simulations of onefinger power InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) before and after both electrical and thermal stress aging. It is well known that GaAs-HBTs with InGaP emitter material can be improved with respect to reliability if the emitter material covers the complete p-doped base layer forming outside the active emitter the so-calle...

The electronic structure of a delta-doped quantum well of Si in GaAs is studied at different temperatures. The calculation is carried out self-consistently in the framework of the Hartree approximation. The energy levels and the mobility trends are reported for various impurity densities. As a consequence, the temperature dependence of the mobility can be explained by means of the temperature v...

The new generation of two-dimensional (2D) materials has shown a broad range applications for optical and electronic devices. Understanding the properties these when integrated with more traditional three-dimensional (3D) semiconductors is an important challenge implementation ultra-thin Recent observations have that by combining MoS$_2$ GaAs it possible to develop high quality photodetectors s...

The theory of tunnel current-voltage (I-V) characteristics of metal-semiconductor junctions based on the self-consistent solution of Poisson equation allows to get the Schottky-barrier height and the charged impurity concentration directly from the tunnel-ing data. This approach was applied to the analysis of the low temperature experiments on tunneling under pressure up to 3 GPa in a piston-cy...

The chemical and electronic properties of selenium passivated GaAs(001)-2×1 surfaces were investigated by a combination of theoretical calculations and core level photoemission experiments. An anion exchange results in galliumselenide like layers showing a 2 × 1 reconstruction in low energy electron diffraction (LEED). The analysis of the different components in the core level spectra of As 3d,...