III-V-on-nothing (III-VON) metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally demonstrated with In0.53Ga0.47As as channel and atomic layer deposited Al2O3 as gate dielectric. A hydrochloric acid based release process has been developed to create an air gap beneath the InGaAs channel layer, forming the nanowire channel with width down to 40 nm. III-VON MOSFETs with c...

Reinforcement learning is applied to the development of control strategies in order reduce skin friction drag a fully developed turbulent channel flow at low Reynolds number. Motivated by so-called opposition (Choi et al. , J. Fluid Mech. vol. 253, 1993, pp. 509–543), which input so as cancel wall-normal velocity fluctuation on detection plane certain distance from wall, we consider wall blowin...

Water flow in open channels is always subject to the resistance to flow and energy dissipation. For design purposes, one of the needed variables is the hydraulic resistance coefficient. For this mean, the influence of cross-sectional shape together with secondary flow cells and lateral distribution of true boundary shear stress have not yet been fully explored. This paper surveys the number of ...